Datasheet
Voltage Detector (Reset) IC Series for Automotive Application
Supervisory IC
BD70Hxx-xC Series
General Description
ROHM's Supervisory ICs are highly accurate, with ultra-
low current consumption feature that uses CMOS
process. The lineup includes N-channel open drain
output (BD70Hxx-xC) and CMOS output (BD73Hxx-2C)
so that the users can select depending on the application.
Because there is no hysteresis, the Release Voltage is
set to same value of Detection Voltage.
BD73Hxx-2C Series
Key Specifications
Release Voltage:
3.76 V, 3.66 V, 3.56 V, 3.46 V, 3.06 V
Ultra-Low Current Consumption:
270 nA (Typ)
Operation Temperature Range: -40 °C to +125 °C
Special Characteristics
Release Voltage Accuracy:
±50 mV (-40 °C to +125 °C)
Features
AEC-Q100 Qualified
(Note 1)
No Hysteresis
Two Output Types
(Nch Open Drain and CMOS Output)
Nano Energy
Very Small, Lightweight and Thin Package
Package SSOP5 is similar to SOT-23-5 (JEDEC)
(Note 1)
Grade 1
Package
SSOP5:
W (Typ) x D (Typ) x H (Max)
2.90 mm x 2.80 mm x 1.25 mm
Application
All automotive devices that requires voltage detection
Typical Application Circuits
V
DD1
R
L
Microcontroller
C
VDD
BD70Hxx-xC
RST
(Noise-reduction
V
DD2
V
DD1
Microcontroller
C
VDD
BD73Hxx-2C
RST
(Noise-reduction
C
L
Capacitor)
C
L
Capacitor)
GND
GND
Figure 1. Open Drain Output Type
BD70Hxx-xC Series
Figure 2. CMOS Output Type
BD73Hxx-2C Series
Pin Configuration
SSOP5
TOP VIEW
N.C.
N.C.
Pin Description
PIN No.
1
2
3
4
5
VOUT VDD GND
SSOP5
PIN NAME
Function
VOUT
Output pin
VDD
Power supply voltage
GND
GND
N.C.
No connection pin
N.C.
No connection pin
The no connection pin is electrically open and
can be connected to either VDD or GND.
Nano Energy is a combination of technologies which realizes ultra low quiescent current operation.
○Product
structure：Silicon integrated circuit
○This
product has no designed protection against radioactive rays
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BD70Hxx-xC Series
Block Diagrams
BD73Hxx-2C Series
VDD
VOUT
Vref
(Note)
(Note)
GND
(Note)
Parasitic Diode
Figure 3. BD70Hxx-xC Series
VDD
(Note)
Vref
VOUT
(Note)
(Note)
GND
(Note)
Parasitic Diode
Figure 4. BD73Hxx-2C Series
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BD70Hxx-xC Series
Ordering Information
BD73Hxx-2C Series
B
Part
Number
D
7
Output Type
0: Nch
Open Drain
3: CMOS
x
H
x
x
G
-
x
C
T
R
Output Logic Release Voltage Package
Product Rank
G: SSOP5
H: Active
38: 3.76 V
C: for Automotive
High
37: 3.66 V
Process Code
36: 3.56 V
35: 3.46 V
31: 3.06 V
Packing and Forming
Specification
TR: Embossed tape and reel
Lineup
Output Type
Release Voltage
3.76 V
3.66 V
3.56 V
3.46 V
3.06 V
Marking
9E
9F
5M
5N
9N
Open Drain
Part Number
BD70H38G-2CTR
BD70H37G-2CTR
BD70H36G-2CTR
BD70H35G-2CTR
BD70H31G-CTR
Marking
5P
5Q
5R
5S
-
CMOS
Part Number
BD73H38G-2CTR
BD73H37G-2CTR
BD73H36G-2CTR
BD73H35G-2CTR
-
Marking Diagram
SSOP5 (TOP VIEW)
Part Number Marking
LOT Number
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BD70Hxx-xC Series
BD73Hxx-2C Series
Absolute Maximum Ratings (Ta = 25 °C)
Parameter
Power Supply Voltage
Nch Open Drain Output
Output Voltage
CMOS Output
Output Current
Maximum Junction Temperature
Storage Temperature Range
Symbol
V
DD
- GND
V
OUT
I
O
Tjmax
Tstg
Limit
-0.3 to +7
GND - 0.3 to +7
GND - 0.3 to VDD + 0.3
70
+150
-55 to +150
Unit
V
V
mA
°C
°C
Caution 1:
Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is
operated over the absolute maximum ratings.
Caution 2:
Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the
properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by increasing
board size and copper area so as not to exceed the maximum junction temperature rating.
Thermal Resistance
(Note 1)
Parameter
SSOP5
Junction to Ambient
Junction to Top Characterization Parameter
(Note 2)
Symbol
Thermal Resistance (Typ)
1s
(Note 3)
376.5
40
2s2p
(Note
4)
185.4
30
Unit
θ
JA
Ψ
JT
°C/W
°C/W
(Note 1)
Based on JESD51-2A (Still-Air).
(Note 2)
The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside
surface of the component package.
(Note 3)
Using a PCB board based on JESD51-3.
(Note 4)
Using a PCB board based on JESD51-7.
Layer Number of
Measurement Board
Single
Top
Copper Pattern
Footprints and Traces
Layer Number of
Measurement Board
4 Layers
Top
Copper Pattern
Footprints and Traces
Material
FR-4
Board Size
114.3 mm x 76.2 mm x 1.57 mmt
Thickness
70 μm
Material
FR-4
Board Size
114.3 mm x 76.2 mm x 1.6 mmt
2 Internal Layers
Thickness
70 μm
Copper Pattern
74.2 mm x 74.2 mm
Thickness
35 μm
Bottom
Copper Pattern
74.2 mm x 74.2 mm
Thickness
70 μm
Recommended Operating Conditions
Parameter
Operating Temperature
Symbol
Topr
Min
-40
Typ
+25
Max
+125
Unit
°C
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BD70Hxx-xC Series
BD73Hxx-2C Series
Electrical Characteristics (Unless otherwise specified Ta = -40 °C to +125 °C, V
DD
= 0.8 V to 6.0 V)
Parameter
Symbol
BD70H38G-2C,
BD73H38G-2C
BD70H37G-2C,
BD73H37G-2C
BD70H36G-2C,
BD73H36G-2C
BD70H35G-2C,
BD73H35G-2C
BD70H31G-C
Circuit Current when ON
Circuit Current when OFF
Minimum Operating Voltage
“High” Output Voltage (Pch)
“Low” Output Voltage (Nch)
Output Leak Curent (BD70Hxx-xC)
Delay Time (H → L)
Delay Time (L → H)
I
DD
1
I
DD
2
V
OPL
V
OH
V
OL
I
LEAK
t
PHL
t
PLH
Condition
Ta = -30 to +70 °C
Ta = -40 to +125 °C
Ta = -30 to +70 °C
Ta = -40 to +125 °C
Ta = -30 to +70 °C
Ta = -40 to +125 °C
Ta = -30 to +70 °C
Ta = -40 to +125 °C
Ta = -30 to +70 °C
Ta = -40 to +125 °C
Min
3.72
3.71
3.62
3.61
3.52
3.51
3.42
3.41
3.02
3.01
-
-
0.80
V
DD
- 0.4
V
DD
- 0.4
-
-
-
20
15
Limit
Typ
3.76
3.66
3.56
3.46
3.06
0.27
0.30
-
-
-
-
-
-
50
40
Max
3.80
3.81
3.70
3.71
3.60
3.61
3.50
3.51
3.10
3.11
1.50
1.60
-
-
-
0.4
0.4
1.0
200
100
Unit
Release Voltage
V
R
V
V
DD
= V
R
- 0.2 V
V
DD
= V
R
+ 0.5 V
V
OL
≤ 0.4 V, R
L
= 100 kΩ
(Note 1)
V
DD
= 4.0 V, I
SOURCE
= 4.0 mA
V
DD
= 6.0 V, I
SOURCE
= 2.5 mA
V
DD
= 1.2 V, I
SINK
= 1.0 mA
V
DD
= 2.4 V, I
SINK
= 2.0 mA
V
DD
= V
DS
= 6 V
V
OUT
= V
DD
→ 50 %,
R
L
= 100 kΩ
(Note 1) (Note 2)
V
OUT
= GND → 50 %,
R
L
= 100 kΩ
(Note 1) (Note 2)
µA
µA
V
V
V
µA
µs
µs
(Note 1)
R
L
: Pull-up resistor connected between V
OUT
and power supply.
(Note 2)
t
PLH
: V
DD
= (V
R
- 0.5 V) → (V
R
+ 0.5 V)
t
PHL
: V
DD
= (V
R
+ 0.5 V) → (V
R
- 0.5 V)
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