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PTZTFTE258.2B

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size2MB,9 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

PTZTFTE258.2B Overview

Zener Diode,

PTZTFTE258.2B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionR-PDSO-C2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
GuidelineAEC-Q101
Nominal reference voltage8.2 V
surface mountYES
technologyZENER
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperature10
Maximum voltage tolerance6.29%
Working test current40 mA
PTZTF8.2B
 
Zener Diode (AEC-Q101 qualified)
Outline
Data sheet
PMDS SOD106
P
D
 
1000
 
mW
 
Feature
 
 
 
 
 
 
 
     
Inner Circuit
 
 
 
 
 
 
 
 
 
  
High reliability
Small power mold type
Application
Packaging Specification
Packing
Reel Size(mm)
T
aping Width(mm)
Basic Ordering Unit(pcs)
T
aping Code
Marking
Voltage regulation
Structure
Silicon Epitaxial Planar
Absolute Maximum Rating (T
a
= 25
)
Embossed T
ape
180
12
1500
TE25
8.2B
Parameter
Power dissipation
Junction temperature
Storage temperature
Symbol
P
D
T
j
T
stg
Limits
1000
150
-55
½
150
 
Unit
mW
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/6
 
2015/06/22_Rev.001

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