PTZTFTE259.1B datasheet, PDF - EEWORLD Datasheet

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PTZTFTE259.1B: DescriptionZener Diode,; CategoryDiscrete semiconductor diode; File Size2MB，9 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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PTZTFTE259.1B Overview

Zener Diode,

PTZTFTE259.1B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	ROHM Semiconductor
package instruction	R-PDSO-C2
Reach Compliance Code	compli
ECCN code	EAR99
Other features	HIGH RELIABILITY
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
JEDEC-95 code	DO-214AC
JESD-30 code	R-PDSO-C2
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
polarity	UNIDIRECTIONAL
Maximum power dissipation	1 W
Guideline	AEC-Q101
Nominal reference voltage	9.1 V
surface mount	YES
technology	ZENER
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	10
Maximum voltage tolerance	5.7%
Working test current	40 mA

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PTZTF9.1B

Zener Diode (AEC-Q101 qualified)

●

Outline

Data sheet

PMDS SOD106

1000

●

Feature

●

Inner Circuit

High reliability

Small power mold type

●

Application

●

Packaging Specification

Packing

Reel Size(mm)

aping Width(mm)

Basic Ordering Unit(pcs)

aping Code

Marking

Voltage regulation

●

Structure

Silicon Epitaxial Planar

●

Absolute Maximum Rating (T

= 25

℃

)

Embossed T

ape

180

1500

TE25

9.1B

Parameter

Power dissipation

Junction temperature

Storage temperature

Symbol

stg

Limits

1000

150

-55

150

Unit

℃

www.rohm.com

1/6

2015/06/22_Rev.001

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