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JANSL2N2484UB

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size704KB,30 Pages
ManufacturerSemicoa
Websitehttp://www.snscorp.com/Semicoa.htm
Environmental Compliance
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JANSL2N2484UB Overview

Transistor,

JANSL2N2484UB Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSemicoa
package instruction,
Reach Compliance Codecompli
ECCN codeEAR99
Factory Lead Time28 weeks
Maximum collector current (IC)0.05 A
ConfigurationSingle
Minimum DC current gain (hFE)200
Maximum operating temperature200 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.36 W
surface mountYES
The documentation and process conversion measures
necessary to comply with this document shall be
completed by 30 June 2013.
INCH-POUND
MIL-PRF-19500/376K
30 March 2013
SUPERSEDING
MIL-PRF-19500/376J
20
November 2010
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER,
TYPES 2N2484, 2N2484UA, 2N2484UB, 2N2484UBC, 2N2484UBN, 2N2484UBCN JAN, JANTX, JANTXV,
JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH JANHCA, JANHCB, JANKCA,
JANKCB, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four
levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product
assurance are provided for die. RHA level designators “M”, “D”, “P“, “L”, “R”, “F’, “G” and “H” are appended to the
device prefix to identify devices, which have passed RHA requirements.
* 1.2 Physical dimensions. See
figure 1
(similar to TO-18), figure 2, (surface mount case outlines UA), figure 3,
(surface mount case outlines UB, UBC, UBN, and UBCN), and figures 4 and 5 (die).
*
1.3 Maximum ratings. Unless otherwise specified T
A
= +25C.
Types
P
T
(1)
T
A
= +25C
mW
2N2484
2N2484UA
2N2484UB, UBN
2N2484UBC, UBCN
360
360
360
360
V dc
60
60
60
60
V dc
6
6
6
6
V dc
60
60
60
60
mA dc
50
50
50
50
C
-65 to +200
-65 to +200
-65 to +200
-65 to +200
C/W
325
275
350
350
C/W
N/A
110
100
100
V
CBO
V
EBO
V
CEO
I
C
T
J
and T
STG
R
JA
(2)
R
JSP
(2)
(1) For derating see figures 6, 7, and 8.
(2) For thermal impedance see figures 9, 10, 11, 12, and 13.
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN:
VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil.
Since contact
information can change, you may want to verify the currency of this address information using the ASSIST Online
database at
https://assist.dla.mil.
AMSC N/A
FSC 5961

JANSL2N2484UB Related Products

JANSL2N2484UB JANS2N2484UBC JANSL2N2484UBC JANTX2N2484UBC JANS2N2484U
Description Transistor, Transistor, Transistor, Transistor, Transistor,
Reach Compliance Code compli compli compliant compliant compliant
Is it Rohs certified? conform to conform to incompatible incompatible -
ECCN code EAR99 EAR99 EAR99 EAR99 -
Factory Lead Time 28 weeks 28 weeks 28 weeks - -
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A 0.05 A -
Configuration Single Single Single Single -
Minimum DC current gain (hFE) 200 200 200 200 -
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C -
Polarity/channel type NPN NPN NPN NPN -
Maximum power dissipation(Abs) 0.36 W 0.36 W 0.36 W 0.36 W -
surface mount YES YES YES YES -
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