SKT250/12C datasheet, PDF - EEWORLD Datasheet

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SKT250/12C: DescriptionSilicon Controlled Rectifier, 392.5A I(T)RMS, 250000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AD; CategoryAnalog mixed-signal IC Trigger device; File Size211KB，6 Pages; ManufacturerSEMIKRON; Websitehttp://www.semikron.com; Environmental Compliance

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SKT250/12C Overview

Silicon Controlled Rectifier, 392.5A I(T)RMS, 250000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AD

SKT250/12C Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SEMIKRON
package instruction	POST/STUD MOUNT, O-MUPM-H3
Reach Compliance Code	compli
Shell connection	ANODE
Nominal circuit commutation break time	150 µs
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	200 V/us
Maximum DC gate trigger current	200 mA
Maximum DC gate trigger voltage	3 V
Maximum holding current	250 mA
JEDEC-95 code	TO-209AD
JESD-30 code	O-MUPM-H3
JESD-609 code	e2
Maximum leakage current	50 mA
On-state non-repetitive peak current	7000 A
Number of components	1
Number of terminals	3
Maximum on-state current	250000 A
Maximum operating temperature	130 °C
Minimum operating temperature	-40 °C
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	392.5 A
Maximum repetitive peak off-state leakage current	50000 µA
Off-state repetitive peak voltage	1200 V
Repeated peak reverse voltage	1200 V
surface mount	NO
Terminal surface	Tin/Silver (Sn/Ag)
Terminal form	HIGH CURRENT CABLE
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

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SKT250/12C Related Products

	SKT250/12C	SKT250/04C	SKT250/08C	SKT300/08C	SKT300/12C	SKT300/04C	SKT300/06C	SKT250/06C
Description	Silicon Controlled Rectifier, 392.5A I(T)RMS, 250000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AD	Silicon Controlled Rectifier, 392.5A I(T)RMS, 250000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-209AD	Silicon Controlled Rectifier, 392.5A I(T)RMS, 250000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AD	Silicon Controlled Rectifier, 471A I(T)RMS, 300000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AD	Silicon Controlled Rectifier, 471A I(T)RMS, 300000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AD	Silicon Controlled Rectifier, 471A I(T)RMS, 300000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-209AD	Silicon Controlled Rectifier, 471A I(T)RMS, 300000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-209AD	Silicon Controlled Rectifier, 392.5A I(T)RMS, 250000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-209AD,
package instruction	POST/STUD MOUNT, O-MUPM-H3	POST/STUD MOUNT, O-MUPM-H3	POST/STUD MOUNT, O-MUPM-H3	POST/STUD MOUNT, O-MUPM-H3	POST/STUD MOUNT, O-MUPM-H3	POST/STUD MOUNT, O-MUPM-H3	POST/STUD MOUNT, O-MUPM-H3	POST/STUD MOUNT, O-MUPM-H3
Reach Compliance Code	compli	compli	compli	unknown	unknown	unknown	unknown	compli
Shell connection	ANODE	ANODE	ANODE	ANODE	ANODE	ANODE	ANODE	ANODE
Nominal circuit commutation break time	150 µs	150 µs	150 µs	150 µs	150 µs	150 µs	150 µs	150 µs
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Critical rise rate of minimum off-state voltage	200 V/us	200 V/us	200 V/us	200 V/us	200 V/us	200 V/us	200 V/us	200 V/us
Maximum DC gate trigger current	200 mA	200 mA	200 mA	200 mA	200 mA	200 mA	200 mA	200 mA
Maximum DC gate trigger voltage	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Maximum holding current	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA
JEDEC-95 code	TO-209AD	TO-209AD	TO-209AD	TO-209AD	TO-209AD	TO-209AD	TO-209AD	TO-209AD
JESD-30 code	O-MUPM-H3	O-MUPM-H3	O-MUPM-H3	O-MUPM-H3	O-MUPM-H3	O-MUPM-H3	O-MUPM-H3	O-MUPM-H3
Maximum leakage current	50 mA	50 mA	50 mA	50 mA	50 mA	50 mA	50 mA	50 mA
On-state non-repetitive peak current	7000 A	7000 A	7000 A	11000 A	11000 A	11000 A	11000 A	7000 A
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3
Maximum on-state current	250000 A	250000 A	250000 A	300000 A	300000 A	300000 A	300000 A	250000 A
Maximum operating temperature	130 °C	130 °C	130 °C	130 °C	130 °C	130 °C	130 °C	130 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	392.5 A	392.5 A	392.5 A	471 A	471 A	471 A	471 A	392.5 A
Maximum repetitive peak off-state leakage current	50000 µA	50000 µA	50000 µA	50000 µA	50000 µA	50000 µA	50000 µA	50000 µA
Off-state repetitive peak voltage	1200 V	400 V	800 V	800 V	1200 V	400 V	600 V	600 V
Repeated peak reverse voltage	1200 V	400 V	800 V	800 V	1200 V	400 V	600 V	600 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	HIGH CURRENT CABLE	HIGH CURRENT CABLE	HIGH CURRENT CABLE	HIGH CURRENT CABLE	HIGH CURRENT CABLE	HIGH CURRENT CABLE	HIGH CURRENT CABLE	HIGH CURRENT CABLE
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER
Trigger device type	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR
Maker	SEMIKRON	-	-	-	SEMIKRON	SEMIKRON	SEMIKRON	SEMIKRON

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