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SKT250/06C

Description
Silicon Controlled Rectifier, 392.5A I(T)RMS, 250000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-209AD,
CategoryAnalog mixed-signal IC    Trigger device   
File Size211KB,6 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance  
Download Datasheet Parametric Compare View All

SKT250/06C Overview

Silicon Controlled Rectifier, 392.5A I(T)RMS, 250000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-209AD,

SKT250/06C Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSEMIKRON
package instructionPOST/STUD MOUNT, O-MUPM-H3
Reach Compliance Codecompli
Shell connectionANODE
Nominal circuit commutation break time150 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Maximum holding current250 mA
JEDEC-95 codeTO-209AD
JESD-30 codeO-MUPM-H3
JESD-609 codee2
Maximum leakage current50 mA
On-state non-repetitive peak current7000 A
Number of components1
Number of terminals3
Maximum on-state current250000 A
Maximum operating temperature130 °C
Minimum operating temperature-40 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current392.5 A
Maximum repetitive peak off-state leakage current50000 µA
Off-state repetitive peak voltage600 V
Repeated peak reverse voltage600 V
surface mountNO
Terminal surfaceTin/Silver (Sn/Ag)
Terminal formHIGH CURRENT CABLE
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR

SKT250/06C Related Products

SKT250/06C SKT250/04C SKT250/08C SKT300/08C SKT300/12C SKT300/04C SKT300/06C SKT250/12C
Description Silicon Controlled Rectifier, 392.5A I(T)RMS, 250000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-209AD, Silicon Controlled Rectifier, 392.5A I(T)RMS, 250000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-209AD Silicon Controlled Rectifier, 392.5A I(T)RMS, 250000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AD Silicon Controlled Rectifier, 471A I(T)RMS, 300000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AD Silicon Controlled Rectifier, 471A I(T)RMS, 300000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AD Silicon Controlled Rectifier, 471A I(T)RMS, 300000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-209AD Silicon Controlled Rectifier, 471A I(T)RMS, 300000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-209AD Silicon Controlled Rectifier, 392.5A I(T)RMS, 250000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AD
package instruction POST/STUD MOUNT, O-MUPM-H3 POST/STUD MOUNT, O-MUPM-H3 POST/STUD MOUNT, O-MUPM-H3 POST/STUD MOUNT, O-MUPM-H3 POST/STUD MOUNT, O-MUPM-H3 POST/STUD MOUNT, O-MUPM-H3 POST/STUD MOUNT, O-MUPM-H3 POST/STUD MOUNT, O-MUPM-H3
Reach Compliance Code compli compli compli unknown unknown unknown unknown compli
Shell connection ANODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE
Nominal circuit commutation break time 150 µs 150 µs 150 µs 150 µs 150 µs 150 µs 150 µs 150 µs
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Critical rise rate of minimum off-state voltage 200 V/us 200 V/us 200 V/us 200 V/us 200 V/us 200 V/us 200 V/us 200 V/us
Maximum DC gate trigger current 200 mA 200 mA 200 mA 200 mA 200 mA 200 mA 200 mA 200 mA
Maximum DC gate trigger voltage 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
Maximum holding current 250 mA 250 mA 250 mA 250 mA 250 mA 250 mA 250 mA 250 mA
JEDEC-95 code TO-209AD TO-209AD TO-209AD TO-209AD TO-209AD TO-209AD TO-209AD TO-209AD
JESD-30 code O-MUPM-H3 O-MUPM-H3 O-MUPM-H3 O-MUPM-H3 O-MUPM-H3 O-MUPM-H3 O-MUPM-H3 O-MUPM-H3
Maximum leakage current 50 mA 50 mA 50 mA 50 mA 50 mA 50 mA 50 mA 50 mA
On-state non-repetitive peak current 7000 A 7000 A 7000 A 11000 A 11000 A 11000 A 11000 A 7000 A
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
Maximum on-state current 250000 A 250000 A 250000 A 300000 A 300000 A 300000 A 300000 A 250000 A
Maximum operating temperature 130 °C 130 °C 130 °C 130 °C 130 °C 130 °C 130 °C 130 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
Package body material METAL METAL METAL METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 392.5 A 392.5 A 392.5 A 471 A 471 A 471 A 471 A 392.5 A
Maximum repetitive peak off-state leakage current 50000 µA 50000 µA 50000 µA 50000 µA 50000 µA 50000 µA 50000 µA 50000 µA
Off-state repetitive peak voltage 600 V 400 V 800 V 800 V 1200 V 400 V 600 V 1200 V
Repeated peak reverse voltage 600 V 400 V 800 V 800 V 1200 V 400 V 600 V 1200 V
surface mount NO NO NO NO NO NO NO NO
Terminal form HIGH CURRENT CABLE HIGH CURRENT CABLE HIGH CURRENT CABLE HIGH CURRENT CABLE HIGH CURRENT CABLE HIGH CURRENT CABLE HIGH CURRENT CABLE HIGH CURRENT CABLE
Terminal location UPPER UPPER UPPER UPPER UPPER UPPER UPPER UPPER
Trigger device type SCR SCR SCR SCR SCR SCR SCR SCR
Maker SEMIKRON - - - SEMIKRON SEMIKRON SEMIKRON SEMIKRON
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