PC817XxNSZ1B Series
PC817XxNSZ1B
Series
DIP 4pin
Photocoupler
Description
PC817XxNSZ1B Series contains an IRED optically
coupled to a phototransistor.
It is packaged in a 4-pin DIP.
Input-output isolation voltage(rms) is 5kV.
Collector-emitter voltage is 80V.
CTR is 50% to 400% (at I
F
=5mA,V
CE
=5V,Ta=25℃)
Agency approvals/Compliance
1. Recognized by UL1577 (Double protection isolation),
file No. E64380 (as model No. PC817)
2. Approved by CSA
file No. CA95323 (as model No. PC817)
3. Package resin : UL flammability grade (94V-0)
Applications
Features
1. 4-pin DIP package
2. Double transfer mold package
(Ideal for Flow Soldering)
3. High isolation voltage between input and output
(Viso(rms) : 5kV)
4. High collector-emitter voltage(V
CEO
: 80V)
5. Current transfer ratio
(CTR : MIN. 50% at I
F
=5 mA, V
CE
=5V ,Ta=25℃)
6. RoHS directive compliant
1. Programmable controllers
2. Facsimiles
3. Telephones
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
Sheet No.: OP18002EN
DATE Jan.15.2018
© SHARP Corporation
PC817XxNSZ1B Series
Internal Connection Diagram
1
2
3
2
3
4
1
4
Anode
Cathode
Emitter
Collector
Outline
１． Through-Hole
[ex.
PC817XNNSZ1B]
(Unit : mm)
２．SMT Gullwing Lead-Form
[ex
. PC817XNNIP1B]
Product mass : approx. 0.23g
Product mass : approx. 0.22g
Sheet No.: OP18002EN
2
PC817XxNSZ1B Series
Date code indication (Ex.)
3-digit number shall be marked the age indication of 1-digit number, and week code of 2-digit number.
Week code “01” indicate the week including the first Thursday of January. And later, Monday is the starting
point.
Year
Week
Date code
652
701
702
703
・
・
・
752
751
752
801
MON
12/26
1/2
1/9
1/16
・
・
・
12/11
12/18
12/25
1/1
TUE
12/27
1/3
1/10
1/17
・
・
・
12/12
12/19
12/26
1/2
WED
12/28
1/4
1/11
1/18
・
・
・
12/13
12/20
12/27
1/3
THU
12/29
1/5
1/12
1/19
・
・
・
12/14
12/21
12/28
1/4
FRI
12/30
1/6
1/13
1/20
・
・
・
12/15
12/22
12/29
1/5
SAT
12/31
1/7
1/14
1/21
・
・
・
12/16
12/23
12/30
1/6
SUN
1/1
1/8
1/15
1/22
・
・
・
12/17
12/24
12/31
1/7
Factory identification mark and Plating material
Factory identification Mark
K
Country of origin
Japan
Plating material
SnBi (Bi : 1
½
4%)
Rank mark
Refer to the Model Line-up table.
Sheet No.: OP18002EN
3
PC817XxNSZ1B Series
Absolute Maximum Ratings
Parameter
Forward current
*1
Peak forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Symbol
I
F
I
FM
V
R
P
V
CEO
V
ECO
I
C
P
C
P
tot
V
iso
(rms)
T
opr
T
stg
T
sol
Rating
50
1
6
70
80
6
50
150
200
5
30 to
100
55 to
125
270
(T
a
½25̊
C)
Unit
mA
A
V
mW
V
V
mA
mW
mW
kV
̊C
̊C
̊C
Input
Output
Total power dissipation
*2
Isolation voltage
Operating temperature
Storage temperature
*2
Soldering temperature
*1 Pulse width≦100μs, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1 minute
*3 For 10s
Electro-optical Characteristics
Parameter
Forward voltage
Peak forward voltage
Reverse current
Terminal capacitance
Dark current
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector current
Collector-emitter saturation voltage
Isolation resistance
Floating capacitance
Cut-off frequency
Risetime
Response time
Fall time
(T
a
½25̊
C)
Symbol
V
F
Condition
I
F
½20mA
I
FM
½0.5A
V
R
½4V
V
½
0, f
½
1kHz
V
CE
½50V,I
F
½0
I
C
½0.1mA,
I
F
½0
I
E
½10A,
I
F
½0
I
F
½5mA,
V
CE
½5V
I
F
½20mA,
I
C
½1mA
DC500V, 40 to 60%RH
V
½
0, f
½
1MHz
V
CE
½5V,
I
C
½2mA,
R
L
½100Ω, 3dB
V
CE
½2V,
I
C
½2mA,
R
L
½100Ω
MIN.
80
6
2.5
5×10
10
TYP.
1.2
30
0.1
1×10
11
0.6
80
4
3
MAX.
1.4
3.0
10
250
100
30
0.2
1.0
18
18
Unit
V
V
A
pF
nA
V
V
mA
V
Ω
pF
kHz
s
s
Input
V
FM
I
R
C
t
I
CEO
BV
CEO
BV
ECO
I
C
V
CE(sat)
R
ISO
C
f
f
C
t
r
t
f
Output
Transfer
charac
teristics
Sheet No.: OP18002EN
51mcu
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