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HY29LV160BF-120

Description
Flash, 1MX16, 120ns, PBGA48, 8 X 9 MM, FBGA-48
Categorystorage    storage   
File Size542KB,48 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
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HY29LV160BF-120 Overview

Flash, 1MX16, 120ns, PBGA48, 8 X 9 MM, FBGA-48

HY29LV160BF-120 Parametric

Parameter NameAttribute value
MakerSK Hynix
Parts packaging codeBGA
package instruction8 X 9 MM, FBGA-48
Contacts48
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time120 ns
Spare memory width8
startup blockBOTTOM
JESD-30 codeR-PBGA-B48
JESD-609 codee1
length9 mm
memory density16777216 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Programming voltage2.7 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
typeNOR TYPE
width8 mm
HY29LV160
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
KEY FEATURES
n
Single Power Supply Operation
– Read, program and erase operations from
2.7 to 3.6 volts
– Ideal for battery-powered applications
High Performance
– 70, 80, 90 and 120 ns access time
versions
Ultra-low Power Consumption (Typical
Values At 5 Mhz)
– Automatic sleep mode current: 1 µA
– Standby mode current: 1 µA
– Read current: 9 mA
– Program/erase current: 20 mA
Flexible Sector Architecture:
– One 16 KB, two 8 KB, one 32 KB and
thirty-one 64 KB sectors in byte mode
– One 8 KW, two 4 KW, one 16 KW and
thirty-one 32 KW sectors in word mode
– Top or bottom boot block configurations
available
Sector Protection
– Allows locking of a sector or sectors to
prevent program or erase operations
within that sector
– Sectors lockable in-system or via
programming equipment
– Temporary Sector Unprotect allows
changes in locked sectors (requires high
voltage on RESET# pin)
Fast Program and Erase Times
– Sector erase time: 0.25 sec typical for
each sector
– Chip erase time: 8 sec typical
– Byte program time: 9
µs
typical
Unlock Bypass Program Command
– Reduces programming time when issuing
multiple program command sequences
Automatic Erase Algorithm Preprograms
and Erases Any Combination of Sectors
or the Entire Chip
Erase Suspend/Erase Resume
– Suspends an erase operation to allow
reading data from, or programming data
to, a sector that is not being erased
– Erase Resume can then be invoked to
complete suspended erasure
Automatic Program Algorithm Writes and
Verifies Data at Specified Addresses
n
100,000 Write Cycles per Sector Minimum
n
Data# Polling and Toggle Bits
– Provide software confirmation of
completion of program and erase
operations
Ready/Busy# Pin
– Provides hardware confirmation of
completion of program and erase
operations
Hardware Reset Pin (RESET#) Resets the
Device to Reading Array Data
Compliant With Common Flash Memory
Interface (CFI) Specification
– Flash device parameters stored directly
on the device
– Allows software driver to identify and use
a variety of different current and future
Flash products
Compatible With JEDEC standards
– Pinout and software compatible with
single-power supply Flash devices
– Superior inadvertent write protection
Space Efficient Packaging
– 48-pin TSOP and 48-ball FBGA packages
n
n
n
n
n
n
n
n
n
n
LOGIC DIAGRAM
20
A[19:0]
DQ[7:0]
7
CE#
OE#
WE#
RESET#
BYTE#
DQ[14:8]
DQ15/A-1
RY/BY#
8
n
n
n
n
Preliminary
Revision 1.0, June 2000

HY29LV160BF-120 Related Products

HY29LV160BF-120 HY29LV160BT-120I HY29LV160BT-120 HY29LV160TF-120 HY29LV160TF-120I HY29LV160TT-120I HY29LV160TT-120 HY29LV160BF-120I
Description Flash, 1MX16, 120ns, PBGA48, 8 X 9 MM, FBGA-48 Flash, 1MX16, 120ns, PDSO48, TSOP-48 Flash, 1MX16, 120ns, PDSO48, TSOP-48 Flash, 1MX16, 120ns, PBGA48, 8 X 9 MM, FBGA-48 Flash, 1MX16, 120ns, PBGA48, 8 X 9 MM, FBGA-48 Flash, 1MX16, 120ns, PDSO48, TSOP-48 Flash, 1MX16, 120ns, PDSO48, TSOP-48 Flash, 1MX16, 120ns, PBGA48, 8 X 9 MM, FBGA-48
Parts packaging code BGA TSOP TSOP BGA BGA TSOP TSOP BGA
package instruction 8 X 9 MM, FBGA-48 TSOP-48 TSOP-48 8 X 9 MM, FBGA-48 8 X 9 MM, FBGA-48 TSOP-48 TSOP-48 8 X 9 MM, FBGA-48
Contacts 48 48 48 48 48 48 48 48
Reach Compliance Code unknow unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum access time 120 ns 120 ns 120 ns 120 ns 120 ns 120 ns 120 ns 120 ns
Spare memory width 8 8 8 8 8 8 8 8
startup block BOTTOM BOTTOM BOTTOM TOP TOP TOP TOP BOTTOM
JESD-30 code R-PBGA-B48 R-PDSO-G48 R-PDSO-G48 R-PBGA-B48 R-PBGA-B48 R-PDSO-G48 R-PDSO-G48 R-PBGA-B48
JESD-609 code e1 e6 e6 e1 e1 e6 e6 e1
length 9 mm 18.4 mm 18.4 mm 9 mm 9 mm 18.4 mm 18.4 mm 9 mm
memory density 16777216 bi 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit
Memory IC Type FLASH FLASH FLASH FLASH FLASH FLASH FLASH FLASH
memory width 16 16 16 16 16 16 16 16
Number of functions 1 1 1 1 1 1 1 1
Number of terminals 48 48 48 48 48 48 48 48
word count 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words
character code 1000000 1000000 1000000 1000000 1000000 1000000 1000000 1000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 85 °C 70 °C 70 °C 85 °C 85 °C 70 °C 85 °C
organize 1MX16 1MX16 1MX16 1MX16 1MX16 1MX16 1MX16 1MX16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TFBGA TSOP1 TSOP1 TFBGA TFBGA TSOP1 TSOP1 TFBGA
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, THIN PROFILE, FINE PITCH SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Programming voltage 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
Nominal supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
surface mount YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL INDUSTRIAL COMMERCIAL COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL INDUSTRIAL
Terminal surface TIN SILVER COPPER TIN BISMUTH TIN BISMUTH TIN SILVER COPPER TIN SILVER COPPER TIN BISMUTH TIN BISMUTH TIN SILVER COPPER
Terminal form BALL GULL WING GULL WING BALL BALL GULL WING GULL WING BALL
Terminal pitch 0.8 mm 0.5 mm 0.5 mm 0.8 mm 0.8 mm 0.5 mm 0.5 mm 0.8 mm
Terminal location BOTTOM DUAL DUAL BOTTOM BOTTOM DUAL DUAL BOTTOM
type NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE
width 8 mm 12 mm 12 mm 8 mm 8 mm 12 mm 12 mm 8 mm
Maker SK Hynix SK Hynix SK Hynix - - SK Hynix SK Hynix SK Hynix
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