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BD176

Description
3A, 45V, PNP, Si, POWER TRANSISTOR, TO-126
CategoryDiscrete semiconductor    The transistor   
File Size54KB,1 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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BD176 Overview

3A, 45V, PNP, Si, POWER TRANSISTOR, TO-126

BD176 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)3 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power consumption environment30 W
Maximum power dissipation(Abs)30 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
VCEsat-Max0.8 V

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