STTH60AC06C
Turbo 2 ultrafast high voltage rectifier
Datasheet
production data
Description
This device uses ST Turbo 2 600 V technology
and is specially suited for use as a boost diode in
air conditioning equipment as continuous mode
interleaved power factor correction.
The device is also intended for use as a free
wheeling diode in power supplies and other
power switching applications.
Table 1. Device summary
Symbol
I
F(AV)
V
RRM
t
rr
(typ)
V
F
(typ)
T
j
Value
2 x 30 A
600 V
40 ns
1.4 V
175 °C
Features
Ultrafast switching
Low reverse current
Low thermal resistance
Reduces switching and conduction losses
Insulated package TO-3PF:
– Insulated voltage: 2500 V
DC
March 2017
This is information on a product in full production.
DocID024886 Rev2
1/13
www.st.com
13
Characteristics
STTH60AC06C
1
Characteristics
Table 2. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
T
j
Repetitive peak reverse voltage
Forward rms current
Parameter
Value
600
50
Per diode
30
Unit
V
A
A
Average forward current
Per device
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
t
p
= 10 ms sinusoidal
60
280
-65 to +175
175
A
°C
°C
Table 3. Thermal parameters
Symbol
R
th(j-c)
R
th(c)
R
th(j-c)
R
th(c)
Parameter
Per diode
Junction to case (TO3P-3L, TO-247, TO-247 LL)
Total
Coupling (TO3P-3L, TO-247, TO-247 LL)
Per diode
Junction to case (TO-3PF)
Total
Coupling (TO-3PF)
2.2
1.6
0.55
0.2
°C/W
2.8
Value
0.9
Unit
Table 4. Static electrical characteristics (per diode)
Symbol
I
R(1)
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
V
F(2)
Forward voltage drop
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
1. Pulse test: t
p
= 5 ms,
< 2%
2. Pulse test: t
p
= 380 µs,
< 2%
V
R
= V
RRM
Min.
Typ.
Max.
10
µA
40
400
1.75
I
F
= 30 A
1.07
1.40
V
2
I
F
= 60 A
1.32
1.7
Unit
To evaluate the conduction losses use the following equation:
P = 1.1 x I
F(AV)
+ 0.01 I
F
2
(RMS)
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DocID024886 Rev2
STTH60AC06C
Table 5. Dynamic characteristics (per diode)
Symbol
t
rr
I
RM
t
fr
V
FP
Parameter
Reverse recovery time
T
j
= 25 °C
Test conditions
I
F
= 0.5 A, I
rr
= 0.25 A, I
R
= 1 A
I
F
= 1 A, V
R
= 30 V, dI
F
/dt = -50 A/µs
Characteristics
Min. Typ. Max. Unit
40
ns
50
6.5
70
9
100
2.5
A
ns
V
I = 30 A, V
R
= 400 V,
Reverse recovery current T
j
= 125 °C
F
dI
F
/dt = -100 A/µs
Forward recovery time
Forward recovery voltage
T
j
= 25 °C
I
F
= 30 A, V
FR
= 1.5 V,
dI
F
/dt = +200 A/µs
Figure 1. Average forward power dissipation
versus average forward current (per diode)
P
F(AV)
(W )
Figure 2. Forward voltage drop versus forward
current (typical values, per diode)
I
F
(A)
60
50
40
30
20
d
= 0.2
d
= 0.5
d
= 0.1
d
= 0.05
d
=1
1000.0
100.0
T j = 150 °C
10.0
T j = 25 °C
T
10
0
0
5
10
15
1.0
tp
I
F(AV)
(A)
d
=tp/T
20
25
30
35
40
0.1
V
F
(V)
0.0
0.4
0.8
1.2
1.6
2.0
2.4
Figure 3. Forward voltage drop versus forward
current (maximum values, per diode)
Figure 4. Relative variation of thermal
impedance, junction to case, versus pulse
duration (TO3P-3L, TO-247, TO-247LL)
Z
th ( j-c)
/R
th ( j-c)
1.0
TO3P-3L / TO247
0.9
0.8
0.7
0.6
0.5
0.4
Single pulse
0.3
0.2
0.1
0.0
1.E-04
1.E-03
1000.0
100.0
10.0
1.0
0.1
I
F
(A)
T j = 150 °C
T j = 25 °C
V
F
(V)
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
t
P
(s)
1.E-02
1.E-01
1.E+00
DocID024886 Rev2
3/13
Characteristics
STTH60AC06C
Figure 5. Relative variation of thermal
impedance, junction to case, versus pulse
duration (TO-3PF)
Z
th ( j-c)
/R
th ( j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
Figure 6. Peak reverse recovery current versus
dI
F
/dt (typical values, per diode)
I
RM
(A)
25
20
15
10
I
F
= 30 A
V
R
= 400 V
T
j
= 125 °C
TO- 3PF
Single pulse
t
P
(s)
5
dI
F
/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
Figure 7. Reverse recovery time versus dI
F
/dt
(typical values, per diode)
t
RR
(ns)
I
F
= 30 A
V
R
= 400 V
T
j
= 125 °C
Figure 8. Reverse recovery charges versus
dI
F
/dt (typical values, per diode)
Q
RR
(nC)
400
350
300
250
200
150
100
50
0
0
2500
2000
1500
1000
I
F
= 30 A
V
R
= 400 V
T
j
= 125 °C
dI
F
/dt(A/µs)
500
0
dI
F
/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
0
50 100 150 200 250 300 350 400 450 500
Figure 9. Reverse recovery softness factor
versus dI
F
/dt (typical values, per diode)
2.5
2.0
1.5
1.0
0.5
dI
F
/dt(A/µs)
Figure 10. Relative variations of dynamic
parameters versus junction temperature
2.0
S
FACTOR
I
F
= 30 A
V
R
= 400 V
T
j
= 125 °C
S
FACTOR
1.5
1.0
I
RM
I
F
= 30 A; V
R
= 400 V
Reference: T
j
= 125 °C
0.5
0.0
Q
RR
T
j
(°C)
75
100
125
0.0
0
50 100 150 200 250 300 350 400 450 500
25
50
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STTH60AC06C
Characteristics
Figure 11. Transient peak forward voltage
versus dI
F
/dt (typical values, per diode)
6 V
FP
(V)
5
4
3
2
1
0
100
dI
F
/dt(A/µs)
I
F
= 30 A
T
j
= 125°C
Figure 12. Forward recovery time versus dI
F
/dt
(typical values, per diode)
t
FR
(ns)
160
140
120
100
80
60
40
20
0
dI
F
/dt(A/µs)
I
F
= 30 A
V
R
= 1.5 V
T
j
= 125°C
150 200
250
300 350
400 450
500
100 150 200 250 300 350 400 450 500
Figure 13. Junction capacitance versus reverse voltage applied (typical values, per diode)
1000
C(pF)
F = 1 MHz
V
OSC
= 30 mV
RMS
T
j
= 25 °C
100
10
VR(V)
1
10
100
1000
DocID024886 Rev2
5/13
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