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20CTQ040-1TRL

Description
20 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA
Categorysemiconductor    Discrete semiconductor   
File Size116KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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20CTQ040-1TRL Overview

20 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA

20CTQ...S/20CTQ...-1
Vishay High Power Products
Schottky Rectifier, 2 x 10 A
20CTQ...S
20CTQ...-1
FEATURES
• 175 °C T
J
operation
• Center tap TO-220 package
• Low forward voltage drop
• High frequency operation
Base
common
cathode
2
Base
common
cathode
2
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for Q101 level
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
DESCRIPTION
The 20CTQ.. center tap Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation up
to 175 °C junction temperature. Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.
D PAK
2
TO-262
PRODUCT SUMMARY
I
F(AV)
V
R
2 x 10 A
35 to 45 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
CHARACTERISTICS
Rectangular waveform
Range
t
p
= 5 µs sine
10 Apk, T
J
= 125 °C (per leg)
Range
VALUES
20
35 to 45
1060
0.57
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
20CTQ035S
20CTQ035-1
35
20CTQ040S
20CTQ040-1
40
20CTQ045S
20CTQ045-1
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 145 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
VALUES
20
1060
265
13
2.0
mJ
A
A
UNITS
T
J
= 25 °C, I
AS
= 2.0 A, L = 6.5 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Document Number: 93952
Revision: 22-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1

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Description 20 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA 20 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA 20 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA 20 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA 20 A, 40 V, SILICON, RECTIFIER DIODE, TO-262AA 20 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA 20 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA 20 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA 20 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA
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