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20CTQ150-1TRRPBF

Description
10 A, 150 V, SILICON, RECTIFIER DIODE, TO-262AA
Categorysemiconductor    Discrete semiconductor   
File Size130KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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20CTQ150-1TRRPBF Overview

10 A, 150 V, SILICON, RECTIFIER DIODE, TO-262AA

20CTQ150-1TRRPBF Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionHALOGEN FREE AND ROHS COMPLIANT, 塑料, TO-220, TO-262, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateDISCONTINUED
packaging shapeRectangle
Package SizeIN-line
Terminal formTHROUGH-hole
terminal coatingNOT SPECIFIED
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structureCOMMON CATHODE, 2 ELEMENTS
Shell connectionCATHODE
Diode component materialssilicon
Diode typerectifier diode
applicationHigh POWER
Phase1
Maximum repetitive peak reverse voltage150 V
Maximum average forward current10 A
Maximum non-repetitive peak forward current1030 A
VS-20CTQ150SPbF, VS-20CTQ150-1PbF
Vishay High Power Products
Schottky Rectifier, 2 x 10 A
VS-20CTQ150SPbF
VS-20CTQ150-1PbF
FEATURES
175 °C T
J
operation
Center tap configuration
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Halogen-free according to IEC 61249-2-21 definition
Compliant to RoHS directive 2002/95/EC
AEC-Q101 qualified
Base
common
cathode
2
Base
common
cathode
2
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
D
2
PAK
TO-262
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
I
F(AV)
V
R
2 x 10 A
150 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
10 Apk, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
20
150
1030
0.66
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-20CTQ150SPbF
VS-20CTQ150-1PbF
150
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
per device
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1 A, L = 2 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated
load condition and with
rated V
RRM
applied
50 % duty cycle at T
C
= 154 °C, rectangular waveform
20
A
1030
180
1.0
1
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
10
UNITS
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
Document Number: 94490
Revision: 23-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1

20CTQ150-1TRRPBF Related Products

20CTQ150-1TRRPBF 20CTQ150SPBF_10 20CTQ150-1PBF 20CTQ150STRLPBF
Description 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-262AA 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-262AA 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-262AA 10 A, 150 V, SILICON, RECTIFIER DIODE
Number of terminals 3 3 3 2
Number of components 2 2 2 2
Terminal form THROUGH-hole THROUGH-hole THROUGH-HOLE GULL WING
Terminal location single single SINGLE SINGLE
Shell connection CATHODE CATHODE CATHODE CATHODE
Diode component materials silicon silicon SILICON SILICON
Diode type rectifier diode rectifier diode RECTIFIER DIODE RECTIFIER DIODE
application High POWER High POWER HIGH POWER HIGH POWER
Phase 1 1 1 1
Maximum repetitive peak reverse voltage 150 V 150 V 150 V 150 V
Maximum non-repetitive peak forward current 1030 A 1030 A 1030 A 1030 A

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