20CTQ150SPBF_10 datasheet, PDF

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20CTQ150SPBF_10: Description10 A, 150 V, SILICON, RECTIFIER DIODE, TO-262AA; Categorysemiconductor Discrete semiconductor; File Size130KB，6 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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20CTQ150SPBF_10 Overview

10 A, 150 V, SILICON, RECTIFIER DIODE, TO-262AA

20CTQ150SPBF_10 Parametric

Parameter Name	Attribute value
Number of terminals	3
Number of components	2
Processing package description	HALOGEN FREE AND ROHS COMPLIANT, 塑料, TO-220, TO-262, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	DISCONTINUED
packaging shape	Rectangle
Package Size	IN-line
Terminal form	THROUGH-hole
terminal coating	NOT SPECIFIED
Terminal location	single
Packaging Materials	Plastic/Epoxy
Craftsmanship	SCHOTTKY
structure	COMMON CATHODE, 2 ELEMENTS
Shell connection	CATHODE
Diode component materials	silicon
Diode type	rectifier diode
application	High POWER
Phase	1
Maximum repetitive peak reverse voltage	150 V
Maximum average forward current	10 A
Maximum non-repetitive peak forward current	1030 A

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VS-20CTQ150SPbF, VS-20CTQ150-1PbF

Vishay High Power Products

Schottky Rectifier, 2 x 10 A

VS-20CTQ150SPbF

VS-20CTQ150-1PbF

FEATURES

•

175 °C T

operation

Center tap configuration

Low forward voltage drop

High frequency operation

High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

Guard ring for enhanced ruggedness and long

term reliability

Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

Halogen-free according to IEC 61249-2-21 definition

Compliant to RoHS directive 2002/95/EC

AEC-Q101 qualified

Base

common

cathode

Base

common

cathode

•

1 Common

Anode cathode Anode

1 Common

Anode cathode Anode

•

PAK

TO-262

DESCRIPTION

This center tap Schottky rectifier has been optimized for low

reverse leakage at high temperature. The proprietary barrier

technology allows for reliable operation up to 175 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

PRODUCT SUMMARY

F(AV)

2 x 10 A

150 V

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

F(AV)

RRM

FSM

= 5 μs sine

10 Apk, T

= 125 °C (per leg)

Range

CHARACTERISTICS

Rectangular waveform

VALUES

150

1030

0.66

- 55 to 175

UNITS

°C

VOLTAGE RATINGS

PARAMETER

Maximum DC reverse voltage

Maximum working peak reverse voltage

SYMBOL

RWM

VS-20CTQ150SPbF

VS-20CTQ150-1PbF

150

UNITS

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Maximum average

forward current

See fig. 5

per leg

F(AV)

per device

5 μs sine or 3 μs rect. pulse

FSM

10 ms sine or 6 ms rect. pulse

= 25 °C, I

= 1 A, L = 2 mH

Current decaying linearly to zero in 1 μs

Frequency limited by T

maximum V

= 1.5 x V

typical

Following any rated

load condition and with

rated V

RRM

applied

50 % duty cycle at T

= 154 °C, rectangular waveform

1030

180

1.0

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak one cycle

non-repetitive surge current per leg

See fig. 7

Non-repetitive avalanche energy per leg

Repetitive avalanche current per leg

Document Number: 94490

Revision: 23-Mar-10

For technical questions, contact:

diodestech@vishay.com

www.vishay.com

20CTQ150SPBF_10 Related Products

	20CTQ150SPBF_10	20CTQ150-1PBF	20CTQ150-1TRRPBF	20CTQ150STRLPBF
Description	10 A, 150 V, SILICON, RECTIFIER DIODE, TO-262AA	10 A, 150 V, SILICON, RECTIFIER DIODE, TO-262AA	10 A, 150 V, SILICON, RECTIFIER DIODE, TO-262AA	10 A, 150 V, SILICON, RECTIFIER DIODE
Number of terminals	3	3	3	2
Number of components	2	2	2	2
Terminal form	THROUGH-hole	THROUGH-HOLE	THROUGH-hole	GULL WING
Terminal location	single	SINGLE	single	SINGLE
Shell connection	CATHODE	CATHODE	CATHODE	CATHODE
Diode component materials	silicon	SILICON	silicon	SILICON
Diode type	rectifier diode	RECTIFIER DIODE	rectifier diode	RECTIFIER DIODE
application	High POWER	HIGH POWER	High POWER	HIGH POWER
Phase	1	1	1	1
Maximum repetitive peak reverse voltage	150 V	150 V	150 V	150 V
Maximum non-repetitive peak forward current	1030 A	1030 A	1030 A	1030 A

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