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20ETS10SPBF

Description
20 A, 1000 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size168KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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20ETS10SPBF Overview

20 A, 1000 V, SILICON, RECTIFIER DIODE

20ETS10SPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current300 A
Number of components1
Maximum operating temperature150 °C
Maximum output current20 A
Maximum repetitive peak reverse voltage1000 V
surface mountYES
Base Number Matches1
Bulletin I2209 rev A 08/06
SAFE
IR
Series
20ETS...SPbF
INPUT RECTIFIER DIODE
Lead-Free ("PbF" suffix)
V
F
< 1V @ 10A
I
FSM
= 300A
Description/ Features
The 20ETS...SPbF rectifier
SAFE
IR
series has
been optimized for very low forward voltage drop,
with moderate leakage. The glass passivation
technology used has reliable operation up to 150°C
junction temperature.
Typical applications are in input rectification and
these products are designed to be used with
International Rectifier Switches and Output
Rectifiers which are available in identical package
outlines.
V
RRM
= 800 - 1200V
Output Current in Typical Applications
Single-phase Bridge
Capacitive input filter T
A
= 55°C, T
J
= 125°C,
common heatsink of 1°C/W
16.3
Three-phase Bridge
21
Units
A
Major Ratings and Characteristics
Characteristics
I
F(AV)
Sinusoidal
waveform
V
RRM
I
FSM
V
F
T
J
@ 10 A, T
J
= 25°C
Package Outline
Units
A
V
A
V
°C
Values
20
800 to 1200
300
1.0
- 40 to 150
D
2
Pak (SMD-220)
www.irf.com
1

20ETS10SPBF Related Products

20ETS10SPBF 20ETS08SPBF 20ETS12SPBF
Description 20 A, 1000 V, SILICON, RECTIFIER DIODE 20 A, 800 V, SILICON, RECTIFIER DIODE, TO-263AB 20 A, 1200 V, SILICON, RECTIFIER DIODE, TO-263AB
Is it Rohs certified? conform to conform to conform to
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
Reach Compliance Code unknown not_compliant compliant
Configuration SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V
Maximum non-repetitive peak forward current 300 A 300 A 300 A
Number of components 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C
Maximum output current 20 A 20 A 20 A
Maximum repetitive peak reverse voltage 1000 V 800 V 1200 V
surface mount YES YES YES
Base Number Matches 1 1 1
Parts packaging code - D2PAK D2PAK
package instruction - SMD-220, TO-220, D2PAK-3 R-PSSO-G2
Contacts - 4 4
application - GENERAL PURPOSE GENERAL PURPOSE
Shell connection - CATHODE CATHODE
Diode component materials - SILICON SILICON
JEDEC-95 code - TO-263AB TO-263AB
JESD-30 code - R-PSSO-G2 R-PSSO-G2
JESD-609 code - e3 e3
Humidity sensitivity level - 1 1
Phase - 1 1
Number of terminals - 2 2
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 260 260
Certification status - Not Qualified Not Qualified
Terminal surface - Matte Tin (Sn) - with Nickel (Ni) barrier MATTE TIN OVER NICKEL
Terminal form - GULL WING GULL WING
Terminal location - SINGLE SINGLE
Maximum time at peak reflow temperature - 30 30
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