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20ETS12SPBF

Description
20 A, 1200 V, SILICON, RECTIFIER DIODE, TO-263AB
CategoryDiscrete semiconductor    diode   
File Size168KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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20ETS12SPBF Overview

20 A, 1200 V, SILICON, RECTIFIER DIODE, TO-263AB

20ETS12SPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeD2PAK
package instructionR-PSSO-G2
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current300 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current20 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
surface mountYES
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
Base Number Matches1
Bulletin I2209 rev A 08/06
SAFE
IR
Series
20ETS...SPbF
INPUT RECTIFIER DIODE
Lead-Free ("PbF" suffix)
V
F
< 1V @ 10A
I
FSM
= 300A
Description/ Features
The 20ETS...SPbF rectifier
SAFE
IR
series has
been optimized for very low forward voltage drop,
with moderate leakage. The glass passivation
technology used has reliable operation up to 150°C
junction temperature.
Typical applications are in input rectification and
these products are designed to be used with
International Rectifier Switches and Output
Rectifiers which are available in identical package
outlines.
V
RRM
= 800 - 1200V
Output Current in Typical Applications
Single-phase Bridge
Capacitive input filter T
A
= 55°C, T
J
= 125°C,
common heatsink of 1°C/W
16.3
Three-phase Bridge
21
Units
A
Major Ratings and Characteristics
Characteristics
I
F(AV)
Sinusoidal
waveform
V
RRM
I
FSM
V
F
T
J
@ 10 A, T
J
= 25°C
Package Outline
Units
A
V
A
V
°C
Values
20
800 to 1200
300
1.0
- 40 to 150
D
2
Pak (SMD-220)
www.irf.com
1

20ETS12SPBF Related Products

20ETS12SPBF 20ETS08SPBF 20ETS10SPBF
Description 20 A, 1200 V, SILICON, RECTIFIER DIODE, TO-263AB 20 A, 800 V, SILICON, RECTIFIER DIODE, TO-263AB 20 A, 1000 V, SILICON, RECTIFIER DIODE
Is it Rohs certified? conform to conform to conform to
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
Reach Compliance Code compliant not_compliant unknown
Configuration SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V
Maximum non-repetitive peak forward current 300 A 300 A 300 A
Number of components 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C
Maximum output current 20 A 20 A 20 A
Maximum repetitive peak reverse voltage 1200 V 800 V 1000 V
surface mount YES YES YES
Base Number Matches 1 1 1
Parts packaging code D2PAK D2PAK -
package instruction R-PSSO-G2 SMD-220, TO-220, D2PAK-3 -
Contacts 4 4 -
application GENERAL PURPOSE GENERAL PURPOSE -
Shell connection CATHODE CATHODE -
Diode component materials SILICON SILICON -
JEDEC-95 code TO-263AB TO-263AB -
JESD-30 code R-PSSO-G2 R-PSSO-G2 -
JESD-609 code e3 e3 -
Humidity sensitivity level 1 1 -
Phase 1 1 -
Number of terminals 2 2 -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) 260 260 -
Certification status Not Qualified Not Qualified -
Terminal surface MATTE TIN OVER NICKEL Matte Tin (Sn) - with Nickel (Ni) barrier -
Terminal form GULL WING GULL WING -
Terminal location SINGLE SINGLE -
Maximum time at peak reflow temperature 30 30 -

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