VS-20UT04, VS-20WT04FN
Vishay Semiconductors
High Performance Schottky Generation 5.0, 20 A
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
I-PAK (TO-251AA)
Base
cathode
4, 2
D-PAK (TO-252AA)
Base
cathode
4, 2
• Extremely low reverse leakage
• Optimized V
F
vs. I
R
trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
1
Anode
3
Anode
1
Anode
3
Anode
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS Directive 2002/95/EC
VS-20UT04
VS-20WT04FN
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
D-PAK (TO-252AA),
I-PAK (TO-251AA)
20 A
45 V
0.53 V
7 mA at 125 °C
175 °C
Single die
108 mJ
APPLICATIONS
• Specific for PV cells bypass diode
• High efficiency SMPS
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• DC/DC systems
• Increased power density systems
Note
• V
F
measured at 125 °C, connecting 2 anode pins
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
V
RRM
V
F
T
J
20 Apk, T
J
= 125 °C
(typical, measured connecting 2 anode pins)
Range
CHARACTERISTICS
VALUES
45
0.480
- 55 to 175
UNITS
V
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
V
R
TEST CONDITIONS
T
J
= 25 °C
VS-20UT04
VS-20WT04FN
45
UNITS
V
Document Number: 94573
Revision: 04-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VS-20UT04, VS-20WT04FN
Vishay Semiconductors
High Performance Schottky
Generation 5.0, 20 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
Note
(1)
Measured connecting 2 anode pins
SYMBOL
I
F(AV)
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 7 A, L = 4.4 mH
Limited by frequency of operation and time pulse duration
so that T
J
< T
J
max. I
AS
at T
J
max. as a function of time pulse
TEST CONDITIONS
50 % duty cycle at T
C
= 153 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
(1)
VALUES
20
900
A
220
108
I
AS
at
T
J
max.
mJ
A
UNITS
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
10 A
Forward voltage drop
V
FM (1)(2)
20 A
10 A
20 A
Reverse leakage current
Junction capacitance
Series inductance
Maximum voltage rate of change
Notes
(1)
Pulse width < 300 μs, duty cycle < 2 %
(2)
Only 1 anode pin connected
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
TYP.
0.505
0.570
0.415
0.520
-
-
1900
-
-
MAX.
0.540
0.610
0450
0.580
100
7
-
-
10 000
μA
mA
pF
nH
V/μs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Case style I-PAK
Case style D-PAK
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
TEST CONDITIONS
VALUES
- 55 to 175
1.2
°C/W
0.3
2
0.07
20UT04
20WT04FN
g
oz.
UNITS
°C
Marking device
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2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94573
Revision: 04-Jan-11
VS-20UT04, VS-20WT04FN
High Performance Schottky
Generation 5.0, 20 A
I
F
- Instantaneous Forward Current (A)
100
100
T
J
= 175 °C
Vishay Semiconductors
I
R
- Reverse Current (mA)
10
T
J
= 150 °C
1
0.1
0.01
0.001
0.0001
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
T
J
= 175 °C
10
T
J
= 125 °C
T
J
= 25 °C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
94573_02
5
10
15
20
25
30
35
40
45
94573_01
V
FM
- Forward Voltage Drop (V)
V
R
- Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
10 000
C
T
- Junction Capacitance (pF)
1000
100
0
94573_03
5
10
15
20
25
30
35
40
45
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
0.1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single
pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
94573_04
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94573
Revision: 04-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VS-20UT04, VS-20WT04FN
Vishay Semiconductors
180
DC
High Performance Schottky
Generation 5.0, 20 A
20
Allowable Case Temperature (°C)
Average Power Loss (W)
170
160
150
140
130
120
0
5
10
15
15
180°
120°
90°
60°
30°
RMS limit
10
Square
wave (D = 0.50)
80 % rated V
R
applied
See
note (1)
5
DC
0
20
25
30
94573_06
0
5
10
15
20
25
30
94573_05
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
100
10
100
1000
10 000
94573_07
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
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4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94573
Revision: 04-Jan-11
VS-20UT04, VS-20WT04FN
High Performance Schottky
Generation 5.0, 20 A
1000
Vishay Semiconductors
Avalanche Current (A)
T
J
= 25 °C
100
T
J
= 125 °C
10
T
J
= 175 °C
1
0.1
1
94573_08
10
100
Rectangular Pulse Duration (μs)
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
1000
T
J
= 25 °C
Avalanche Energy (mJ)
T
J
= 125 °C
T
J
= 175 °C
100
10
1
94573_09
10
100
Rectangular Pulse Duration (μs)
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Document Number: 94573
Revision: 04-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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