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GBU805-KD2

Description
Bridge Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size264KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric Compare View All

GBU805-KD2 Overview

Bridge Rectifier Diode,

GBU805-KD2 Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
Reach Compliance Codecompli
ECCN codeEAR99
Minimum breakdown voltage600 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSFM-T4
Maximum non-repetitive peak forward current200 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage600 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
GBU804-K - GBU807-K
Taiwan Semiconductor
CREAT BY ART
8A, 400V - 1000V Glass Passivated Single-Phase Bridge Rectifiers
FEATURES
- Ideal for printed circuit board
- High case dielectric strength of 1500 VRMS
- High surge current capability
- Typical I
R
less than 0.1μA
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
GBU
MECHANICAL DATA
Case:
GBU
Molding compound: UL flammability classification rating 94V-0
Terminal:
Matte tin plated leads, solderable per J-STD-002
Packing code with suffix "G" means green compound (halogen-free)
Polarity:
As marked
Mounting torque:
0.56 Nm (5 in-lbs.) max.
Weight:
4 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current,
8.3 ms single half sine-wave
Rating of fusing ( t<8.3ms)
Maximum Instantaneous Forward Voltage (Note 1)
I
F
= 4 A
I
F
= 8 A
Maximum reverse current @ rated V
R
T
J
=25°C
T
J
=125°C
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
SYMBOL GBU804-K GBU805-K GBU806-K GBU807-K
GBU804
400
280
400
GBU805
600
420
600
8
200
166
1.0
1.1
5
500
211
2
21
- 55 to +150
- 55 to +150
94
GBU806
800
560
800
GBU807
1000
700
1000
V
V
V
A
A
A
2
s
V
UNIT
I
R
C
J
R
θJC
R
θJA
T
J
T
STG
μA
pF
°C/W
°C
°C
Typical junction capacitance per leg (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1MHz and applied reverse bias of 4.0V
Version: D1606

GBU805-KD2 Related Products

GBU805-KD2 GBU807-KD2G GBU805-KD2G GBU807-KD2
Description Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode,
Reach Compliance Code compli compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Minimum breakdown voltage 600 V 1000 V 600 V 1000 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
Maximum non-repetitive peak forward current 200 A 200 A 200 A 200 A
Number of components 4 4 4 4
Phase 1 1 1 1
Number of terminals 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C
Maximum output current 8 A 8 A 8 A 8 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Maximum repetitive peak reverse voltage 600 V 1000 V 600 V 1000 V
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maker Taiwan Semiconductor - Taiwan Semiconductor Taiwan Semiconductor
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