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TSZU52C3V0RZ

Description
Zener Diode, 3V V(Z), 5%, 0.15W, Silicon, Unidirectional, ROHS COMPLIANT, LEADLESS, ULTRA THIN, PLASTIC, 0603, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size139KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric View All

TSZU52C3V0RZ Overview

Zener Diode, 3V V(Z), 5%, 0.15W, Silicon, Unidirectional, ROHS COMPLIANT, LEADLESS, ULTRA THIN, PLASTIC, 0603, 2 PIN

TSZU52C3V0RZ Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionR-PDSO-N2
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-N2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation0.15 W
Nominal reference voltage3 V
surface mountYES
technologyZENER
Terminal formNO LEAD
Terminal locationDUAL
Maximum voltage tolerance5%
Working test current5 mA
CREAT BY ART
TSZU52C2V0 - TSZU52C39
150mW SMD Zener Diode
Small Signal Product
Features
150mW power dissipation
High voltages form 2 - 39 V
Designed for mounting on small surface
Extremely thin / leadless package
Pb free product
0603
Mechanical Data
Cases : 0603 standard package
molded plastic
Terminals : Gold plated, solderable per
MIL-STD-750, method 2026
Polarity : Indicated by cathode band
Weight : 0.003 grams (approximately)
Ordering Information (example)
Part No.
TSZU52C2V0
Package
0603
Packing
10K / 13" Reel
Packing code
--
Packing code
(Green)
RCG
Manufacture code
Note : Detail please see "Ordering Information(detail, example)" below.
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacity load, derate current by 20%.
Parameter
Maximum Power Dissipation
Maximum Forward Voltage Drop at I
F
= 10 mA
Forward Current, Surge Peak
8.3 ms Single Half Sine-wave Superimposed on Rate Load
(JEDEC method)
Operating Junction and Storage Temperature Range
Symbol
P
D
V
F
I
FSM
T
STG
,T
J
Value
150
0.9
2.0
-55 to +125
Unit
mW
V
A
o
C
Version : C14
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