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US1JE4G

Description
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-214AC, GREEN, PLASTIC, SMA, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size290KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric View All

US1JE4G Overview

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-214AC, GREEN, PLASTIC, SMA, 2 PIN

US1JE4G Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionGREEN, PLASTIC, SMA, 2 PIN
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage800 V
Maximum reverse recovery time0.075 µs
surface mountYES
Terminal formC BEND
Terminal locationDUAL
creat by ART
US1A - US1M
1.0AMP. High Efficient Surface Mount Rectifiers
SMA/DO-214AC
Features
Glass passivated chip junction
For surface mounted application
Low profile package
Built-in strain relief
Ideal for automated placement
Easy pick and place
Ultrafast recovery time for high efficiency
Low forward voltage, low power loss
High temperature soldering guaranteed:
260℃/10 seconds on terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-0
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Case: Molded plastic
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: Indicated by cathode band
Weight: 0.064 grams
Ordering Information (example)
Part No.
US1A
Package
SMA
Packing
1.8K / 7" REEL
Packing
code
R3
Green Compound
Packing code
R3G
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@1A
Maximum Reverse Current @ Rated VR
T
A
=25
T
A
=125
Symbol US1A US1B US1D US1G
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
US1J
600
420
600
US1K US1M
800
560
800
1000
700
1000
Unit
V
V
V
A
A
50
35
50
100
70
100
200
140
200
400
280
400
1
30
1.0
5
150
50
15
75
27
- 55 to + 150
- 55 to + 150
1.7
V
uA
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
75
10
O
nS
pF
C/W
O
O
R
θjA
R
θjL
T
J
T
STG
C
C
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
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