TLP2312
Photocouplers
Infrared LED & Photo IC
TLP2312
1. Applications
•
•
•
Programmable Logic Controllers (PLCs)
Industrial Inverters
High-Speed Digital Interfacing for Instrumentation and Control Devices
2. General
TLP2312 is 5 Mbps high speed photocoupler operated at low supply voltage in the small SO6 package.
Since supply voltage of only 2.2 V is needed to operate TLP2312, building another power supply circuit is
unnecessary even in using it in a low supply voltage system of 2.5 V LVCMOS level. Therefore, this product
contributes to reduce the number of components.
The low threshold input current (I
FLH
) of 1.6 mA (max) and the low supply current (I
DDL
/I
DDH
) of 0.5 mA (max)
at entire operating temperature range of -40
to 125
enables TLP2312 to be driven from a microcontroller
directly, and provides energy saving of systems.
The detector has a totem-pole output stage with current sourcing and sinking capabilities. TLP2312 has an
internal Faraday shield that provides a guaranteed common-mode transient immunity of
±20
kV/µs.
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
Package: SO6
Data transfer rate: 5 Mbps (typ.)
Supply current: 0.5 mA (max)
Threshold input current: 1.6 mA (max)
Supply voltage: 2.2 to 5.5 V
Operating temperature range: -40 to 125
Pulse width distortion: 20 ns (max)
Isolation voltage: 3750 Vrms (min)
Safety standards
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)
CQC-approved: GB4943.1, GB8898 Japan Factory (Pending)
Note 1: When a VDE approved type is needed, please designate the Option (V4)
(V4).
Start of commercial production
©2020
Toshiba Electronic Devices & Storage Corporation
1
2020-02
2020-03-31
Rev.2.0
TLP2312
4. Packaging and Pin Assignment
1: Anode
3: Cathode
4: GND
5: V
O
(Output)
6: V
DD
11-4L1S
5. Internal Circuit (Note)
Note:
A 0.1-µF bypass capacitor must be connected between pin 6 and pin 4.
6. Principle of Operation
6.1. Truth Table
Input
H
L
LED
ON
OFF
Output
H
L
6.2. Mechanical Parameters
Characteristics
Creepage distances
Clearance
Internal isolation thickness
Min
5.0
5.0
0.4
Unit
mm
©2020
Toshiba Electronic Devices & Storage Corporation
2
2020-03-31
Rev.2.0
TLP2312
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
LED
Input forward current
Input forward current derating
Input forward current (pulsed)
Input forward current derating
(pulsed)
Peak transient input forward
current
Peak transient input forward
current derating
Input reverse voltage
Input power dissipation
Input power dissipation
derating
Detector Output current
Output voltage
Supply voltage
Output power dissipation
Output power dissipation
derating
Common Operating temperature
Storage temperature
Lead soldering temperature
Isolation voltage
(10 s)
(AC, 60 s, R.H.
≤
60 %)
(T
a
≥
110
)
(T
a
≥
110
)
(T
a
≥
110
)
(T
a
≥
110
)
(T
a
≥
110
)
Symbol
I
F
∆I
F
/∆T
a
I
FP
∆I
FP
/∆T
a
I
FPT
∆I
FPT
/∆T
a
V
R
P
D
∆P
D
/∆T
a
I
O
V
O
V
DD
P
O
∆P
O
/∆T
a
T
opr
T
stg
T
sol
BV
S
(Note 3)
(Note 2)
(Note 1)
Note
Rating
8
-0.32
16
-0.64
1
-40
5
20
-0.8
8
-0.5 to V
DD
+ 0.5
-0.5 to 6
20
-0.8
-40 to 125
-55 to 125
260
3750
Unit
mA
mA/
mA
mA/
A
mA/
V
mW
mW/
mA
V
V
mW
mW/
Vrms
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW)
≤
1 ms, duty = 50 %
Note 2: Pulse width (PW)
≤
1
µs,
300 pps
Note 3: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are
shorted together.
8. Recommended Operating Conditions (Note)
Characteristics
Input on-state current
Input off-state voltage
Rise time of I
F
Fall time of I
F
Supply voltage
Operating temperature
Symbol
I
F(ON)
V
F(OFF)
t
r(IF)
t
f(IF)
V
DD
T
opr
(Note 1)
(Note 2)
(Note 3)
(Note 3)
Note
Min
2
0
5n
5n
2.2
-40
Typ.
2.5 / 3.3 / 5
Max
6
0.8
60
60
5.5
125
Unit
mA
V
s
s
V
The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this data sheet should also be considered.
Note: A ceramic capacitor (0.1
µF)
should be connected between pin 6 and pin 4 to stabilize the operation of a high-
gain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor should be
placed within 1 cm of each pin.
Note 1: The rise time of input forward current which takes for linear increase from 0 mA to 2 mA.
Note 2: The fall time of input forward current which takes for linear decrease from 2 mA to 0 mA.
Note 3: Denotes the operating range, not the recommended operating condition.
©2020
Toshiba Electronic Devices & Storage Corporation
Note:
3
2020-03-31
Rev.2.0
TLP2312
9. Electrical Characteristics (Note)
(Unless otherwise specified, T
a
= -40 to 125
, V
DD
= 2.2 to 5.5 V)
Characteristics
Input forward voltage
Input forward voltage
temperature coefficient
Input reverse current
Input capacitance
Low-level output voltage
High-level output voltage
Low-level supply current
High-level supply current
Threshold input current (L/H)
Symbol Test Circuit
V
F
∆V
F
/∆T
a
I
R
C
t
V
OL
V
OH
I
DDL
I
DDH
I
FLH
Test Condition
I
F
= 2 mA
I
F
= 2 mA, T
a
= 25
I
F
= 2 mA
V
R
= 5 V, T
a
= 25
V = 0 V, f = 1 MHz, T
a
= 25
Fig. 12.1.1 I
O
= 20
µA,
I
F
= 0 mA
I
O
= 3.2 mA, I
F
= 0 mA
Fig. 12.1.2 I
O
= -20
µA,
I
F
= 2 mA
I
O
= -3.2 mA, I
F
= 2 mA
Fig. 12.1.3 I
F
= 0 mA
Fig. 12.1.4 I
F
= 2 mA
I
O
= -3.2 mA, V
O
> V
DD
- 1 V
Min
1.2
1.4
V
DD
- 0.1
V
DD
- 0.65
Typ.
1.53
-1.58
22
0.0008
0.11
V
DD
- 0.001
V
DD
- 0.14
0.39
0.35
0.55
Max
1.9
1.7
10
0.1
0.41
0.5
0.5
1.6
mA
mV/
µA
pF
V
Unit
V
Note:
All typical values are at V
DD
= 3.3 V, T
a
= 25
,
unless otherwise noted.
10. Isolation Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Total capacitance (input to output)
Isolation resistance
Isolation voltage
Symbol
C
S
R
S
BV
S
Note
Test Condition
Min
10
12
3750
Typ.
0.8
10
14
Max
Unit
pF
Ω
Vrms
(Note 1) V
S
= 0 V, f = 1 MHz
(Note 1) V
S
= 500 V, R.H.
≤
60 %
(Note 1) AC, 60 s
Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are
shorted together.
©2020
Toshiba Electronic Devices & Storage Corporation
4
2020-03-31
Rev.2.0
TLP2312
11. Switching Characteristics (Note)
(Unless otherwise specified, T
a
= -40 to 125
, V
DD
= 2.2 to 5.5 V)
Characteristics
Propagation delay time (L/H)
Propagation delay time (H/L)
Pulse width distortion
Propagation delay skew
(device to device)
Propagation delay time (L/H)
Propagation delay time (H/L)
Pulse width distortion
Propagation delay skew
(device to device)
Propagation delay time (L/H)
Propagation delay time (H/L)
Pulse width distortion
Propagation delay skew
(device to device)
Rise time
Fall time
High-level common-mode
transient immunity
Low-level common-mode
transient immunity
Symbol
t
pLH
t
pHL
|t
pHL
-t
pLH
|
t
psk
t
pLH
t
pHL
|t
pHL
-t
pLH
|
t
psk
t
pLH
t
pHL
|t
pHL
-t
pLH
|
t
psk
t
r
t
f
CM
H
CM
L
Fig.
12.1.6
(Note 1),
(Note 2)
(Note 1)
V
IN
= 0
→
3.3 V, R
IN
= 1 kΩ,
C
IN
= 22 pF
V
IN
= 3.3
→
0 V, R
IN
= 1 kΩ,
C
IN
= 22 pF
I
F
= 2 mA,
V
CM
= 1000 V
p-p
, T
a
= 25
I
F
= 0 mA,
V
CM
= 1000 V
p-p
, T
a
= 25
(Note 1),
(Note 2)
(Note 1)
V
IN
= 5 V
R
IN
= 2.2 kΩ
C
IN
= 10 pF
(Note 1),
(Note 2)
(Note 1)
V
IN
= 3.3 V
R
IN
= 1 kΩ
C
IN
= 22 pF
Note
(Note 1)
Test
Circuit
Fig.
12.1.5
Test Condition
V
IN
= 2.5 V
R
IN
= 470
Ω
C
IN
= 68 pF
Min
-40
-45
-45
±20
±20
Typ.
26.8
27.3
0.5
32.7
28.2
4.5
31.3
28.5
2.8
2.2
1.6
±40
±40
Max
250
250
20
40
250
250
20
45
250
250
20
45
kV/µs
kV/µs
Unit
ns
Note: All typical values are at V
DD
= 3.3 V, T
a
= 25
,
unless otherwise noted.
Note 1: f = 2.5 MHz, duty = 50 %, input current t
r
= t
f
= 5 ns or less.
Note 2: The propagation delay skew, t
psk
, is equal to the magnitude of the worst-case difference in t
pHL
and/or t
pLH
that will be seen between units at the same given conditions (supply voltage, input current, temperature, etc).
©2020
Toshiba Electronic Devices & Storage Corporation
5
2020-03-31
Rev.2.0
京公网安备 11010802033920号
EEWORLD
