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2N80G-TF1-T

Description
Power Field-Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size269KB,7 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric Compare View All

2N80G-TF1-T Overview

Power Field-Effect Transistor

2N80G-TF1-T Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionTO-220F1, 3 PIN
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)180 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage800 V
Maximum drain current (ID)2.4 A
Maximum drain-source on-resistance6.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)9 pF
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)24 W
Maximum pulsed drain current (IDM)9.6 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
2N80
2.4A, 800V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
2N80
is an N-channel mode power MOSFET using
UTC’s advanced technology to provide costumers planar stripe and
DMOS technology. This technology is specialized in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC
2N80
is universally applied in high efficiency switch
mode power supply.
FEATURES
* R
DS(on)
< 6.3Ω @ V
GS
=10V, I
D
=1.2A
* High switching speed
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
Ordering Number
Lead Free
Halogen Free
2N80L-TA3-T
2N80G-TA3-T
2N80L-TF1-T
2N80G-TF1-T
2N80L-TF2-T
2N80G-TF2-T
2N80L-TF3-T
2N80G-TF3-T
2N80L-TM3-R
2N80G-TM3-R
2N80L-TN3-R
2N80G-TN3-R
2N80L-TND-R
2N80G-TND-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-480.F

2N80G-TF1-T Related Products

2N80G-TF1-T 2N80G-TA3-T 2N80G-TF2-T 2N80L-TA3-T 2N80L-TF1-T 2N80L-TF2-T
Description Power Field-Effect Transistor Power Field-Effect Transistor Power Field-Effect Transistor Power Field-Effect Transistor Power Field-Effect Transistor Power Field-Effect Transistor
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
package instruction TO-220F1, 3 PIN TO-220, 3 PIN TO-220F2, 3 PIN TO-220, 3 PIN TO-220F1, 3 PIN TO-220F2, 3 PIN
Reach Compliance Code compli compli compli compli compli compli
Avalanche Energy Efficiency Rating (Eas) 180 mJ 180 mJ 180 mJ 180 mJ 180 mJ 180 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 800 V 800 V 800 V 800 V 800 V 800 V
Maximum drain current (ID) 2.4 A 2.4 A 2.4 A 2.4 A 2.4 A 2.4 A
Maximum drain-source on-resistance 6.3 Ω 6.3 Ω 6.3 Ω 6.3 Ω 6.3 Ω 6.3 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 9 pF 9 pF 9 pF 9 pF 9 pF 9 pF
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 24 W 85 W 24 W 85 W 24 W 24 W
Maximum pulsed drain current (IDM) 9.6 A 9.6 A 9.6 A 9.6 A 9.6 A 9.6 A
surface mount NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Shell connection ISOLATED - ISOLATED - ISOLATED ISOLATED
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