UNISONIC TECHNOLOGIES CO., LTD
2SC5027E
HIGH VOLTAGE AND HIGH
RELIABILITY TRANSISTOR
FEATURES
NPN SILICON TRANSISTOR
* High Speed Switching
* Wide SOA
ORDERING INFORMATION
Order Number
Lead Free
2SC5027EL-x-TA3-T
2SC5027EL-x-TF3-T
2SC5027EL-x-TF1-T
2SC5027EL-x-TF2-T
Halogen Free
2SC5027EL-x-TA3-T
2SC5027EL-x-TF3-T
2SC5027EL-x-TF1-T
2SC5027EL-x-TF2-T
Package
TO-220
TO-220F
TO-220F1
TO-220F2
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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NPN SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
750
V
Collector-Emitter Voltage
V
CEO
700
V
Collector-Emitter Voltage
V
EBO
7
V
Peak Collector Current
I
C
3
A
Collector Current (Pulse)
I
CP
10
A
Base Current
I
B
1.5
A
TO-220/TO-220F
50
Power Dissipation
P
D
W
TO-220F/TO-220F1
40
TO-220F2
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, unless otherwise specified)
SYMBOL
TEST CONDITIONS
BV
CBO
I
C
=1mA, I
E
=0
BV
CEO
I
C
=5mA, I
B
=0
BV
EBO
I
E
=1mA, I
C
=0
I
C
=1.5A, I
B1
= -I
B2
=0.3A
V
CEO(SUS)
L=2mH, Clamped
I
CBO
V
CB
=750V, I
E
=0
I
EBO
V
EB
=5V, I
C
=0
h
FE1
V
CE
=5V, I
C
=0.2A
V
CE
=5V, I
C
=1A
h
FE 2
V
CE (SAT)
I
C
=1.5A, I
B
=0.3A
V
BE (SAT)
I
C
=1.5A, I
B
=0.3A
C
OB
V
CB
=10V, f=1MHz, I
E
=0
f
T
V
CE
=10V, I
C
=0.2A
t
ON
V
CC
=400V
I
C
=5I
B1
= -2.5I
B2
=2A
t
S
R
L
=200Ω
t
F
MIN
750
700
7
700
10
10
40
2
1.5
60
15
0.5
3
0.3
TYP
MAX
UNIT
V
V
V
V
μA
μA
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
10
8
V
V
pF
MHz
μs
μs
μs
CLASSIFICATION of h
FE1
CLASSIFICATION
RANGE
N
10 ~ 20
R
15 ~ 30
O
20 ~ 40
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Time, t
ON
, t
STG
, t
F
(μs)
Saturation Voltage, V
BE(SAT)
,
V
CE(SAT)
(V)
Collector Current, I
C
(A)
■
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
m
10
0
μ
10
1m
s
s
s
C
D
UNISONIC TECHNOLOGIES CO., LTD
Collector Current, Ic (A)
DC Current Gain, h
FE
www.unisonic.com.tw
Collector Current, Ic (A)
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2SC5027E
TYPICAL CHARACTERISTICS(Cont.)
Reverse Operating Area
100
I
B2
=-0.3A
80
NPN SILICON TRANSISTOR
Power Derating
10
Power Dissipation, P
D
(W)
100us
1ms
1000
10000
70
60
50
40
30
20
10
Collector Current, Ic (A)
1
0.
1
0.0
1
0
0
25
50
75
100
125
150 175
10
100
Collector-Emitter Voltage, V
CE
(V)
Case Temperature, T
C
(℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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