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BZV55-B4V3

Description
Zener Diode, 4.3V V(Z), 2%, 0.5W
CategoryDiscrete semiconductor    diode   
File Size294KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

BZV55-B4V3 Overview

Zener Diode, 4.3V V(Z), 2%, 0.5W

BZV55-B4V3 Parametric

Parameter NameAttribute value
MakerVishay
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance90 Ω
Number of components1
Maximum operating temperature200 °C
Maximum power dissipation0.5 W
Nominal reference voltage4.3 V
surface mountYES
Maximum voltage tolerance2%
Working test current5 mA
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
BZV55 SERIES
ZENER DIODES
Mini-MELF
FEATURES
Silicon Planar Power Zener Diodes
.063 (1.6)
.055 (1.4)
Cathode Mark
For use as low voltage stabilizer or
voltage reference.
The Zener voltages are graded according to the
international E 24 standard. Higher Zener voltages
and 1% tolerance available on request.
Diodes available in these tolerance series:
±
2% BZV55-B,
±
3% BZV55-F,
±
5% BZV55-C.
MECHANICAL DATA
Case:
Mini-MELF Glass Case (SOD-80)
Weight:
approx. 0.05 g
Cathode band color:
Blue
.142 (3.6)
.134 (3.4)
.019 (0.48)
.011 (0.28)
Dimensions are in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Zener Current see Table “Characteristics”
Power Dissipation at T
flange
= 50°C
Power Dissipation at T
A
= 50°C
Junction Temperature
Storage Temperature Range
Continuous Forward Current
Peak reverse power disipation (non-repetitive) tp=100µs
P
tot
P
tot
T
j
T
S
I
F
P
ZSM
500
400
(1)
mW
mW
°C
°C
mA
W
–65 to +200
–65 to +200
250
30
(2)
SYMBOL
MIN.
TYP.
MAX.
UNIT
Thermal Resistance Junction to Ambient Air
Thermal Resistance Junction to Lead
Forward Voltage at I
F
= 10 mA
R
thJA
R
thJL
V
F
0.38
0.9
(1)
K/mW
K/mW
V
0.30
NOTES:
1) Mounted on ceramic substrate 10mm x 10mm x 0.6mm
2) Tj = 150°C
9/29/98
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