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3.0SMCJ200

Description
3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size168KB,5 Pages
ManufacturerFCI [First Components International]
Download Datasheet View All

3.0SMCJ200 Overview

3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

Data Sheet
De s c ription
5 .0 V to 220 V S M D T R A N S I E N T
V O LT A G E S U P P R E S S O R S
M e c ha nic a l Dim e ns ions
TVS
Device
Load
Uni-Polar
TVS
Device
Load
3 .0 S MC J 5 .0 . . . 220
DO-214AB
(SMC)
Bi-Polar
F e a ture s
n 1500 WAT T P E AK P OWE R P R OT E C T ION
n E X C E L L E N T C L A M P I N G C A PA B I L I T Y
n FA S T R E S P O N S E T I M E
n T Y P I C A L I
R
< 1
µ
A A B O V E 1 0 V
n G L AS S PAS S IVAT E D C HIP C ONS T R U C T ION
n M E E T S U L S P E C I F I C AT I O N 9 4 V -0
3 . 0 S M C J 5 . 0 . . .
220
Maximum Ratings
Peak Power Dissipation...P
PK
10/1000ms WAVEFORM (NOTE 1,2, FIG1)
Peak Pulse Current.....Ippm
10/1000ms waveform (note 1, fig. 3)
......................................... 3000 Min. ..........................................
Units
Watts
see table 1
Watts
.............................................
200
...............................................
Non-Repetitive Peak Forward Surge Current...I
FSM
@ Rated Load Conditions, 8.3 ms, ½ Sine Wave, Single Phase
(Note: 2 3)
Weight...G
RM
Soldering Requirements (Time & Temp)...S
T
@ 250°C
Operating & Storage Temperature Range...T
J
, T
STRG
NOTES: 1.
2.
3.
4.
5.
............................................. 0. 20 ...............................................
Amps
Grams
............................................. 11 Sec. ........................................... Min. to
Solder
......................................... -65 to 175 ..........................................
°C
F or B i-Directional Applications, Use C or C A. E lectrical C haracteristics Apply in B oth Directions.
Mounted on 8mm C opper P ads to E ach Terminal.
8.3 ms, ½ S ine Wave, S ingle P hase Duty C ycle, @ 4 P ulses P er Minute Maximum.
V
B R
Measured After It Applies for 300
µs.
I
T
= S quare Wave P ulse or E quivalent.
Non-R epetitive C urrent P ulse. P er F ig. 3 and Derated Above T
A
= 25°C per F ig. 2.
P a ge 1 0 -3 8
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