SEMICONDUCTOR
RoHS
300D(R)Series
RoHS
Nell High Power Products
Standard Recovery Diodes
Stud Version, 300A
FEATURES
Alloy diode
Popular series for rough service
Stud cathode and stud anode version
RoHS compliant
Designed and qualified for industrial level
Ceramic housing
TYPICAL APPLICATIONS
Welders
Power supplies
Motor controls
Battery chargers
General industrial current rectification
Glass-metal seal
Glass-metal seal (Metric stud)
PRODUCT SUMMARY
I
F(AV)
300A
DO-205AB(DO-9)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
300D(R)
04 TO 12
300
130
110
6050
6330
183
166
400 to 1200
-40 to 175
1600 to 2000
-40 to 150
16 TO 20
UNIT
A
ºC
I
F(AV)
I
FSM
I
2
t
V
RRM
T
J
T
C
50 HZ
60 HZ
50 HZ
60 HZ
Range
A
kA
2
s
V
ºC
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
l
RRM
, MAXIMUM
AT T
J
= 175 °C
mA
04
06
300D( R )
400
600
800
1200
1600
2000
500
700
900
40
1300
1700
2100
08
12
16
20
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Page 1 of 7
SEMICONDUCTOR
RoHS
300D(R)Series
RoHS
Nell High Power Products
FORWARD CONDUCTION
PARAMETER
SYMBOL
I
F(AV)
TEST CONDITIONS
180° conduction, half sine wave
t
= 10ms
No voltage
reapplied
100%V
RRM
reapplied
No voltage
reapplied
100%V
RRM
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
300D(R)
300
130/110
6050
6330
5080
5311
183
166
129
117
1830
0.610
0.751
UNIT
A
ºC
Maximum average forward current
at maximum case temperature
Maximum peak, one cycle forward,
non-reptitive surge current
I
FSM
t
= 8.3ms
t
= 10ms
t
=
8.3ms
t
= 10ms
t
= 8.3ms
A
Maximum l²t for fusing
I
2
t
t
= 10ms
t
= 8.3ms
kA
2
s
Maximum l²√t for fusing
Maximum value of threshold voltage
Maximum value of forward slope resistance
Maximum forward voltage drop
I
2
√t
V
F(TO)
r
F
t = 0.1 ms to 10 ms, no voltage reapplied
kA
2
√
s
T
J
= T
J
Maximum
l
pk
= 942A, T
J
= 25°C
V
mΩ
V
V
FM
1.40
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
300D(R)
04 TO 12
16 TO 20
UNIT
Maximum junction operating and
storage temperature range
Maximum thermal resistace,
junction to case
Maximum thermal resistance
case to heatsink
Maximum allowable mounting torque
(+0% , -20%)
Approximate weight
T
J,
T
stg
- 40 to175 - 40 to150
ºC
R
thJC
DC operation
0.18
K/W
R
thCS
Mounting surface, smooth, flat and greased
Not lubricated threads
Lubricated threads
Ceramic housing
Glass-metal seal
0.08
37
28
228
203
DO-205AB (DO-9)
Nm
g
Case style
(JEDEC) see dimensions -
link at the end of datasheet
R
thJC
CONDUCTION
CONDUCTION ANGEL
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.020
0.024
0.031
0.045
0.077
RECTANGULAR CONDUCTION
0.015
0.025
0.034
0.047
0.077
TEST CONDUCTIONS
UNITS
T
J
= T
J
maximum
K/W
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
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Page 2 of 7
SEMICONDUCTOR
RoHS
300D(R)Series
RoHS
Nell High Power Products
Fig.1 Current ratings characteristics
200
R
thJC
(DC) = 0.18 K/W
Maximum average forward power loss (W)
Maximum Average foward power lass (W)
Fig.2 Current ratings characteristics
200
R
thJC
(DC) = 0.18 K/W
190
180
170
160
150
140
30°
130
120
110
0
100
200
300
400
60°
90°
120°
180°
DC
500
Conduction Period
180
Conduction Angle
160
140
30°
60°
120
0
50
100 150 200 250 300 350
Average forward current (A)
90°
120° 180°
Average forward current (A)
Fig.3 Forward power loss characteristics
Maximum Average foward power lass (W)
400
350
300
250
200
150
Conduction Angle
RMS Limit
180°
120°
90°
60°
30°
0.
2
K
/
W
R
th
SA
K
/
W
0.4
K
/
0.5
W
K
/
W
0.7
K
/
W
1
K
/
W
1.5
K
/
W
0.
3
=
1
0.
W
K
/
a
elt
-
D
R
100
50
0
0
50
T
J
= 175°C
3
K
/W
100 150 200 250 300 350
Average Forward Current (A)
50
75
100 125 150
175 200
Maximum Allowable Ambient Temperature (°C)
Fig.4 Forward power loss characteristics
Maximum Average foward power lass (W)
500
450
400
350
300
250
RMS Limit
DC
180°
120°
90°
60°
30°
0.2
K
/
W
0.3
K
/
W
0.5
K
/
W
0.7
K
/
W
1
K
/
W
1.5
K
/
W
3
K
/W
R
t
A
hS
=
1
0.
W
K
/
ta
el
-
D
R
200
150
100
50
0
0
100
200
300
400
T
J
= 175°C
Conduction Period
500
50
75
100 125 150
175 200
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
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Page 3 of 7
SEMICONDUCTOR
RoHS
300D(R)Series
RoHS
Nell High Power Products
Fig.5 Maximum non-repetitive surge current
Peak half sine wave forward current (A)
Peak half sine wave forward current (A)
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
1
10
100
Number of equal amplitude half cycle
current pulses(N)
At any rated load condition and with
rated vrrm applied following surge.
lnitial T
j
=175°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Fig.6 Maximum non-repetitive surge current
7000
6500
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
0.01
0.1
Pulse train duration (S)
1
Maximum non repetitive surge current
versus pulse train duration.
lnitial T
j
= 175°C
no voltage reapplied
rated vrrm reapplied
Fig.7 Forward voltage drop characteristics
Transient thermal lmpedance Z
thJC
(K/W)
10000
lnstantaneous forward current (A)
1
Fig.8 Thermal lmpedance Z
thJC
characteristic
Steady state value
R
thJC
= 0.18 K/W
(DC Operation)
1000
0.1
T
j
= 25°C
100
T
j
= 200°C
0.01
10
0
0.5
1
1.5
2
2.5
3
Instantaneous forward voltage (V)
0.001
0.0001
0.001
0.01
0.1
1
10
Square wave pulse duration (S)
ORDERING INFORMATION TABLE
Device code
300
1
1
2
3
4
5
6
-
-
-
-
-
-
D
R
3
04
4
B
M
5
2
5
Current rating, 300 = 300A
D = Standard Recovery Diode
None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
Voltage code
×
10 = V
RRM
(see Voltage Ratings table)
None = DO-9, Ceramic housing type with insulated tube
B
= DO-9, Glass-Metal Seal Type
None = standard device, 3/4”-16UNF-2A
M
= Metric device, M20 x 1.5 , with insulated tube
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Page 4 of 7
SEMICONDUCTOR
RoHS
300D(R)Series
RoHS
N
ell
High Power Products
DO-205AB (DO-9), Ceramic housing
300D
300D(R)
AII dimensions in millimeters (inches)
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Page 5 of 7
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