EEWORLDEEWORLDEEWORLD

Part Number

Search

30CTQ040-1

Description
30 A, SILICON, RECTIFIER DIODE, TO-262AA
CategoryDiscrete semiconductor    diode   
File Size107KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

30CTQ040-1 Overview

30 A, SILICON, RECTIFIER DIODE, TO-262AA

30CTQ040-1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-262AA
package instructionR-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY
applicationHIGH POWER
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.56 V
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
Humidity sensitivity level1
Maximum non-repetitive peak forward current1060 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current30 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
30CTQ...S/30CTQ...-1
Vishay High Power Products
Schottky Rectifier, 2 x 15 A
30CTQ...S
30CTQ...-1
FEATURES
• 175 °C T
J
operation
• Center tap TO-220 package
• Very low forward voltage drop
Base
common
cathode
2
Base
common
cathode
2
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
• Designed and qualified for Q101 level
DESCRIPTION
The 30CTQ... center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
D
2
PAK
TO-262
PRODUCT SUMMARY
I
F(AV)
V
R
2 x 15 A
35 to 45 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 µs sine
15 Apk, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
30
35 to 45
1060
0.56
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
30CTQ035S
30CTQ035-1
35
30CTQ040S
30CTQ040-1
40
30CTQ045S
30CTQ045-1
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 127 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
VALUES
30
1060
265
20
3.0
mJ
A
A
UNITS
T
J
= 25 °C, I
AS
= 3.0 A, L = 4.40 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Document Number: 93957
Revision: 06-Oct-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2681  496  638  747  100  54  10  13  16  3 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号