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30CTQ050STRR

Description
15 A, 50 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size131KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

30CTQ050STRR Overview

15 A, 50 V, SILICON, RECTIFIER DIODE

30CTQ050STRR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeSFM
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY
applicationHIGH POWER
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.56 V
JESD-30 codeR-PSSO-G2
Humidity sensitivity level1
Maximum non-repetitive peak forward current1000 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
30CTQ...S/30CTQ...-1
Vishay High Power Products
Schottky Rectifier, 2 x 15 A
30CTQ...S
30CTQ...-1
FEATURES
• 150 °C T
J
operation
• Center tap configuration
• Very low forward voltage drop
• High frequency operation
Base
common
cathode
2
Base
common
cathode
2
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for Q101 level
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
DESCRIPTION
This center tap Schottky rectifier has been optimized for very
low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation up
to 150 °C junction temperature. Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.
D PAK
2
TO-262
PRODUCT SUMMARY
I
F(AV)
V
R
2 x 15 A
50/60 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 µs sine
15 Apk, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
30
50/60
1000
0.56
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
30CTQ050S
30CTQ050-1
50
30CTQ060S
30CTQ060-1
60
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
per device
I
F(AV)
per leg
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
50 % duty cycle at T
C
= 105 °C, rectangular waveform
15
A
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
1000
260
13
1.50
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
30
UNITS
T
J
= 25 °C, I
AS
= 1.50 A, L = 11.5 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Document Number: 93958
Revision: 22-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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