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30CTQ080-1TRL

Description
15 A, 80 V, SILICON, RECTIFIER DIODE, TO-262AA
CategoryDiscrete semiconductor    diode   
File Size127KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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30CTQ080-1TRL Overview

15 A, 80 V, SILICON, RECTIFIER DIODE, TO-262AA

30CTQ080-1TRL Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-262AA
package instructionR-PSIP-T3
Contacts3
Reach Compliance Codeunknow
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Humidity sensitivity levelNOT SPECIFIED
Maximum non-repetitive peak forward current850 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
surface mountNO
technologySCHOTTKY
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
30CTQ...S/30CTQ...-1
Vishay High Power Products
Schottky Rectifier, 2 x 15 A
30CTQ...S
30CTQ...-1
FEATURES
175 °C T
J
operation
Center tap configuration
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for Q101 level
Base
common
cathode
2
Base
common
cathode
2
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
D PAK
2
TO-262
PRODUCT SUMMARY
I
F(AV)
V
R
2 x 15 A
80/100 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 µs sine
15 Apk, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
30
80/100
850
0.67
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
30CTQ080S
30CTQ080-1
80
30CTQ100S
30CTQ100-1
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
per device
I
F(AV)
per leg
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
50 % duty cycle at T
C
= 129 °C, rectangular waveform
15
A
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
850
275
7.50
0.50
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
30
UNITS
T
J
= 25 °C, I
AS
= 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Document Number: 93959
Revision: 22-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1

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