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30CTQ100-1TRR

Description
15 A, 100 V, SILICON, RECTIFIER DIODE, TO-262AA
Categorysemiconductor    Discrete semiconductor   
File Size127KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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30CTQ100-1TRR Overview

15 A, 100 V, SILICON, RECTIFIER DIODE, TO-262AA

30CTQ...S/30CTQ...-1
Vishay High Power Products
Schottky Rectifier, 2 x 15 A
30CTQ...S
30CTQ...-1
FEATURES
175 °C T
J
operation
Center tap configuration
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for Q101 level
Base
common
cathode
2
Base
common
cathode
2
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
D PAK
2
TO-262
PRODUCT SUMMARY
I
F(AV)
V
R
2 x 15 A
80/100 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 µs sine
15 Apk, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
30
80/100
850
0.67
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
30CTQ080S
30CTQ080-1
80
30CTQ100S
30CTQ100-1
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
per device
I
F(AV)
per leg
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
50 % duty cycle at T
C
= 129 °C, rectangular waveform
15
A
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
850
275
7.50
0.50
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
30
UNITS
T
J
= 25 °C, I
AS
= 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Document Number: 93959
Revision: 22-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1

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