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30EPH03PBF

Description
30 A, 300 V, SILICON, RECTIFIER DIODE, TO-247AC
CategoryDiscrete semiconductor    diode   
File Size578KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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30EPH03PBF Overview

30 A, 300 V, SILICON, RECTIFIER DIODE, TO-247AC

30EPH03PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-247AC
package instructionR-PSFM-T2
Contacts3
Reach Compliance Codecompli
Other featuresFREE WHEELING DIODE
applicationULTRA FAST RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeTO-247AC
JESD-30 codeR-PSFM-T2
JESD-609 codee3
Maximum non-repetitive peak forward current300 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current30 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage300 V
Maximum reverse recovery time0.055 µs
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
Base Number Matches1
30EPH03PbF
Vishay High Power Products
Ultrafast Rectifier,
30 A FRED Pt
TM
FEATURES
Base
common
cathode
2
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
Pb-free
Available
RoHS*
COMPLIANT
TO-247AC modified
1
Cathode
3
Anode
DESCRIPTION/APPLICATIONS
300 V series are the state of the art ultrafast recovery
rectifiers designed with optimized performance of forward
voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
t
rr
I
F(AV)
V
R
55 ns
30 A
300 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 143 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
300
30
300
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
= 100 µA
I
F
= 30 A
I
F
= 30 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 300 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
300
-
-
-
-
-
-
TYP.
-
1.08
0.9
0.05
280
90
3.5
MAX.
-
1.25
1.00
60
600
-
-
µA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
I
R
C
T
L
S
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94017
Revision: 07-Apr-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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