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1N5831

Description
Diode Schottky 40V 25A 2-Pin DO-4
CategoryDiscrete semiconductor    diode   
File Size49KB,1 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
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Diode Schottky 40V 25A 2-Pin DO-4

1N5831 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
Base Number Matches1
20 STERN AVE
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 378-2922
(212) 227-8005
FAX: (973) 376-6960
1N5829
thru
1N5831
Features
Metal of siliconrectifier, majonty carrier conductor)
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
25 Amp Schottky
Barrier Rectifier
20 to 35 Volts
DO-4
MaximumRatings
Operating Temperature: -65°C to +150°C
Storage Temperature: -65°C to +150°C
Maximum
Recurrent
Peak Reverse
Voltage
20V
25V
35V
Maximum
RMS Voltage
14V
17.5V
24.5V
Maximum DC
Blocking
Voltage
20V
25V
35V
MCC
Part Number
1N5829
1N5830
1N5831
Electrical Characteristics @ 25 C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
1N5829
1N5830
1N5831
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Ip(AV)
25 A
800A
T
L
= 85°C
IFSM
8.3ms, half sine
IFM = 25 A;
T
A
=125°C
V
F
.44V
.46V
.48V
IR
20mA
10-32 UNF3A
Threads
Standard
Polarity
T
A
= 25° C
*Pulse Test: Pulse Width SOO^isec, Duty Cycle 1%
N.I Semi-Conductors reserves the right lo change test conditions, parameter limits and package dimensions \vithout notice.
Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time or"going to press. However NJ
Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages
customers to verity that datasheets are current before placing orders.
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