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30WQ06FNTRRPBF

Description
3.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-252AA
CategoryDiscrete semiconductor    diode   
File Size128KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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30WQ06FNTRRPBF Overview

3.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-252AA

30WQ06FNTRRPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-252AA
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY, FREE WHEELING DIODE
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.76 V
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current490 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current3.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage60 V
surface mountYES
technologySCHOTTKY
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrie
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
VS-30WQ06FNPbF
Vishay Semiconductors
Schottky Rectifier, 3.5 A
Base
cathode
4, 2
FEATURES
• Popular D-PAK outline
• Small foot print, surface mountable
• Low forward voltage drop
D-PAK (TO-252AA)
1
Anode
3
Anode
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
D-PAK (TO-252AA)
3.5 A
60 V
See Electrical table
30 mA at 125 °C
150 °C
Single die
6 mJ
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
The VS-30WQ06FNPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC board. Typical applications
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
3 Apk, T
J
= 125 °C
CHARACTERISTICS
Rectangular waveform
VALUES
3.5
60
490
0.53
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-30WQ06FNPbF
60
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 133 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1 A, L = 12 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
3.5
490
70
6.0
1.0
mJ
A
A
UNITS
Document Number: 94199
Revision: 14-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1

30WQ06FNTRRPBF Related Products

30WQ06FNTRRPBF 30WQ06FNPBF_11
Description 3.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-252AA 3.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-252AA
application GENERAL PURPOSE GENERAL PURPOSE
Shell connection CATHODE CATHODE
Diode component materials SILICON silicon
Diode type RECTIFIER DIODE rectifier diode
Maximum non-repetitive peak forward current 490 A 490 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum repetitive peak reverse voltage 60 V 60 V
surface mount YES Yes
Terminal form GULL WING GULL WING
Terminal location SINGLE single

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