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30WQ06FNPBF_11

Description
3.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-252AA
Categorysemiconductor    Discrete semiconductor   
File Size128KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

30WQ06FNPBF_11 Overview

3.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-252AA

30WQ06FNPBF_11 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionLEAD FREE, PLASTIC, SIMILAR TO TO-252AA, DPAK-3
Lead-freeYes
EU RoHS regulationsYes
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin OVER Nickel
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Shell connectionCATHODE
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage60 V
Maximum average forward current3.5 A
Maximum non-repetitive peak forward current490 A
VS-30WQ06FNPbF
Vishay Semiconductors
Schottky Rectifier, 3.5 A
Base
cathode
4, 2
FEATURES
• Popular D-PAK outline
• Small foot print, surface mountable
• Low forward voltage drop
D-PAK (TO-252AA)
1
Anode
3
Anode
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
D-PAK (TO-252AA)
3.5 A
60 V
See Electrical table
30 mA at 125 °C
150 °C
Single die
6 mJ
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
The VS-30WQ06FNPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC board. Typical applications
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
3 Apk, T
J
= 125 °C
CHARACTERISTICS
Rectangular waveform
VALUES
3.5
60
490
0.53
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-30WQ06FNPbF
60
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 133 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1 A, L = 12 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
3.5
490
70
6.0
1.0
mJ
A
A
UNITS
Document Number: 94199
Revision: 14-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1

30WQ06FNPBF_11 Related Products

30WQ06FNPBF_11 30WQ06FNTRRPBF
Description 3.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-252AA 3.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-252AA
Number of terminals 2 2
Number of components 1 1
surface mount Yes YES
Terminal form GULL WING GULL WING
Terminal location single SINGLE
Shell connection CATHODE CATHODE
Diode component materials silicon SILICON
Diode type rectifier diode RECTIFIER DIODE
application GENERAL PURPOSE GENERAL PURPOSE
Phase 1 1
Maximum repetitive peak reverse voltage 60 V 60 V
Maximum non-repetitive peak forward current 490 A 490 A
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