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B580B

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 80V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size1MB,3 Pages
ManufacturerWeitron Technology
Websitehttp://weitron.com.tw/
Download Datasheet Parametric Compare View All

B580B Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 80V V(RRM), Silicon, DO-214AA, SMB, 2 PIN

B580B Parametric

Parameter NameAttribute value
MakerWeitron Technology
package instructionR-PDSO-C2
Reach Compliance Codeunknow
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.85 V
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage80 V
Maximum reverse current200 µA
surface mountYES
technologySCHOTTKY
Terminal formC BEND
Terminal locationDUAL

B580B Preview

B520B thru B5200B
Surface Mount Schottky Barrier Rectifiers
Features:
*Low Profile Packeage
*Ldeal for Automated Placement
*Guard Ring for Over Voltage Protection
*Low Forward Voltage Drop
*Component in Accordance to RoHS 2002/95/EC
*AEC-Q101 Qualified
REVERSE VOLTAGE
20 TO 200 VOLTS
FORWARD CURRENT
5.0 AMPERE
Mechanical Data
*Case : Molded Plastic. UL Flammability
Classification Rating 94V-0
*Terminals: Lead Free Plating (Tin Finish) Solderable
Per MIL-STD-202, Method 208
*Polarity :Cathode Band
*Weight : 0.095 grams
SMB(DO-214AA)
SMB Outline Dimension
SMB
Dim
A
B
C
D
E
G
H
J
Min
3.30
4.06
1.96
0.15
5.00
0.10
0.76
2.00
Unit:mm
Max
3.94
4.80
2.21
0.31
5.59
0.20
1.52
2.62
WEITRON
http://www.weitron.com.tw
1/3
23-Jul-2013
B520B thru B5200B
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
(TA 25°C l
th
i
t d)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3ms single half sine-
wave superimposed on rated load
Maximum Instantaneous Forward Voltage
IF=5A @ 25°C
Maximum DC Reverse Current @ Tc=25°C
at Rated DC Blocking Voltage @ Tc=100°C
Typical Junction Capacitance(NOTE1)
Typical Thermal Resistance(NOTE2)
Operating Temperature Range
Storage Temperature Range
NOTES:
1.Measured at 1.0MHZ and applied reverse voltage of 4.0V DC
2.Device mounted on FR-4 substrate, 1"*1", 2oz, single-sided, PC boards with 0.1"*0.15" copper pad.
SYMBOL
V
RRM
V
RMS
V
DC
I
F
I
FSM
V
F
I
R
C
j
R
θJa
R
θJC
T
J
T
STG
-55 to +125
-55 to +150
300
0.55
0.5
10
210
80
50
-55 to +150
170
B
520B
20
14
20
B
530B
30
21
30
B
540B
40
28
40
B
550B
50
35
50
B
560B
60
42
60
5.0
100.0
0.70
0.85
0.2
5.0
150
110
0.87
0.90
B
B
B
B
UNIT
580B 5100B 5150B 5200B
80
56
80
100
70
100
150
105
150
200
140
200
V
V
V
A
A
V
mA
pF
°C/W
°C
°C
WEITRON
http://www.weitron.com.tw
2/3
23-July-2013
B520B thru B5200B
FIG. 1-TYPICAL FORWARD CURRENT DERATING CURVE
5
INSTANTANEOUS FORWARD CURRENT (A)
F
AVERAGE FO
ORWARD CURRENT,(A)
FIG. 2-TYPICAL FORWARD CHARACTERISTICS
100.00
B520B~B540B
B550B~B560B
B580B~B5100B
B5150B
B5200B
4
10.00
3
B520B~B560B
2
B5100B~B5200B
1
1.00
0.10
TJ=25℃ PULSE
WIDTH 300us 2%
DUTY CYCLE
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE(℃)
0.01
0.2
0.4
0.6
0.8
1.0
FORWARD VOLTAGE (V)
FIG. 3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
160
PEAK FORWARD SURGE CURRENT (A)
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
100
REVERSE LEAKAG CURRENT (mA)
GE
25℃
10
100℃
140
120
100
80
60
40
20
0
1
10
NUMBER OF CYCLES AT 60Hz
TJ=25℃ 8.3ms Single
Half Sine Wave
JEDEC method
1
0.1
01
0.01
0.001
0.0001
100
20
40
60
80
100
( )
PERCENTAGE RATED PEAK REVERSE VOLTAGE (%)
FIG. 5-TYPICAL JUNCTION CAPACITANCE
1000
B520B~B540B
B550B~B560B
800
JUNCTION CAPACITANCE (pF)
E
B580B~B5100B
B5150B
600
B5200B
400
200
0
0
1
10
100
REVERSE VOLTAGE (V)
WEITRON
http://www.weitron.com.tw
3/3
23-July-2013

B580B Related Products

B580B B5100B
Description Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 80V V(RRM), Silicon, DO-214AA, SMB, 2 PIN Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
Maker Weitron Technology Weitron Technology
package instruction R-PDSO-C2 SMB, 2 PIN
Reach Compliance Code unknow unknown
ECCN code EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.85 V 0.85 V
JEDEC-95 code DO-214AA DO-214AA
JESD-30 code R-PDSO-C2 R-PDSO-C2
Maximum non-repetitive peak forward current 100 A 100 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C
Maximum output current 5 A 5 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Guideline AEC-Q101 AEC-Q101
Maximum repetitive peak reverse voltage 80 V 100 V
Maximum reverse current 200 µA 200 µA
surface mount YES YES
technology SCHOTTKY SCHOTTKY
Terminal form C BEND C BEND
Terminal location DUAL DUAL
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