ZC820B datasheet, PDF - EEWORLD Datasheet

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ZC820B: DescriptionVariable Capacitance Diode, 10pF C(T), 25V, Silicon, Hyperabrupt, TO-92 COMPATIBLE, E-LINE PACKAGE-2; CategoryDiscrete semiconductor diode; File Size66KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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ZC820B Overview

Variable Capacitance Diode, 10pF C(T), 25V, Silicon, Hyperabrupt, TO-92 COMPATIBLE, E-LINE PACKAGE-2

ZC820B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	O-PBCY-W2
Reach Compliance Code	unknow
ECCN code	EAR99
Minimum breakdown voltage	25 V
Configuration	SINGLE
Diode Capacitance Tolerance	5%
Minimum diode capacitance ratio	5
Nominal diode capacitance	10 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
JESD-30 code	O-PBCY-W2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Maximum power dissipation	0.3 W
Certification status	Not Qualified
minimum quality factor	300
Maximum repetitive peak reverse voltage	25 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Varactor Diode Classification	HYPERABRUPT

ZC820B Preview

SILICON ION-IMPLANTED

HYPERABRUPT TUNER DIODES

ISSUE 2 MARCH 94

ZC820

SERIES

DIODE PIN CONNECTION

1

CATHODE

2

ANODE

2

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Reverse Voltage

Forward Current

Power Dissipation at T

amb

=25°C

Junction Temperature

Storage Temperature Range

SYMBOL

V

R

I

F

P

tot

T

j

T

stg

MAX

25

200

300

125

-55 to +200

UNIT

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

=25°C)

PARAMETER

Reverse Voltage Leakage

Temperature Coefficient

of Capacitance

SYMBOL MIN

I

R

η

TYP

MAX

0.02

UNIT CONDITIONS

µ

A

0.03

0.04

%/°C

V

R

=3V

TUNING CHARACTERISTICS (at T

amb

=25°C)

PART

NO

MIN

ZC820

ZC821

ZC822

ZC823

ZC824

ZC825

ZC826

8

12

17.6

26.4

37.6

54.4

80

Nominal Capacitance

in pF

@ V

R

=2V, f=1MHz

NOM

10

15

22

33

47

68

100

MAX

12

18

26.4

39.6

56.4

81.6

120

Minimum

Q

@ V

R

=3V

f=50MHz

300

200

100

Capacitance Ratio

C

2

/C

20

,

at f=1MHz

MIN

5

MAX

6.5

*Available with 2V nominal capacitance

±

10 suffix A,

±

5% suffix B

3-107

ZC820

SERIES

200

100

Diode Capacitance (pF)

10

826

825

824

823

822

821

820

1

10

100

Reverse

Voltage (Volts)

Diode Capacitance

3-108

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