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ZTX751STZ

Description
Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size79KB,3 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZTX751STZ Overview

Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX751STZ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionIN-LINE, R-PSIP-W3
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-based maximum capacity30 pF
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PSIP-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power consumption environment2.5 W
Certification statusNot Qualified
GuidelineCECC
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.5 V
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 – JULY 94
FEATURES
* 60 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
* P
tot
= 1 Watt
ZTX750
ZTX751
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation: at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
ZTX750
MIN. TYP.
-60
-45
-5
-0.1
-10
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX751
MAX. MIN. TYP.
-80
-60
-5
MAX.
ZTX750
-60
-45
-5
-6
-2
1
5.7
E-Line
TO92 Compatible
ZTX751
-80
-60
UNIT
V
V
V
A
A
W
mW/°C
°C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown
Voltage
Collector-Emitter
Breakdown
Voltage
Emitter-Base
Breakdown
Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
UNIT CONDITIONS.
V
V
V
µ
A
µ
A
µ
A
µ
A
µ
A
I
C
=-100
µ
A
I
C
=-10mA
I
E
=-100
µ
A
V
CB
=-45V
V
CB
=-60V
V
CB
=-45V,
T
amb
=100°C
V
CB
=-60V,
T
amb
=100°C
V
EB
=-4V
I
C
=-1A, I
B
=-100mA
I
C
=-2A, I
B
=-200mA
I
C
=-1A, I
B
=-100mA
-0.1
-10
-0.1
-0.15 -0.3
-0.28 -0.5
-0.9
Emitter Cut-Off
Current
I
EBO
-0.1
-0.15 -0.3
-0.28 -0.5
-0.9
-1.25
Collector-Emitter
V
CE(sat)
Saturation Voltage
Base-Emitter
V
BE(sat)
Saturation Voltage
V
V
-1.25 V
3-257
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