PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 JULY 94
FEATURES
* 60 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
* P
tot
= 1 Watt
ZTX750
ZTX751
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation: at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
ZTX750
MIN. TYP.
-60
-45
-5
-0.1
-10
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX751
MAX. MIN. TYP.
-80
-60
-5
MAX.
ZTX750
-60
-45
-5
-6
-2
1
5.7
E-Line
TO92 Compatible
ZTX751
-80
-60
UNIT
V
V
V
A
A
W
mW/°C
°C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown
Voltage
Collector-Emitter
Breakdown
Voltage
Emitter-Base
Breakdown
Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
UNIT CONDITIONS.
V
V
V
µ
A
µ
A
µ
A
µ
A
µ
A
I
C
=-100
µ
A
I
C
=-10mA
I
E
=-100
µ
A
V
CB
=-45V
V
CB
=-60V
V
CB
=-45V,
T
amb
=100°C
V
CB
=-60V,
T
amb
=100°C
V
EB
=-4V
I
C
=-1A, I
B
=-100mA
I
C
=-2A, I
B
=-200mA
I
C
=-1A, I
B
=-100mA
-0.1
-10
-0.1
-0.15 -0.3
-0.28 -0.5
-0.9
Emitter Cut-Off
Current
I
EBO
-0.1
-0.15 -0.3
-0.28 -0.5
-0.9
-1.25
Collector-Emitter
V
CE(sat)
Saturation Voltage
Base-Emitter
V
BE(sat)
Saturation Voltage
V
V
-1.25 V
3-257
ZTX750
ZTX751
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX750
MIN. TYP.
100
140
40
450
30
ZTX751
MAX. MIN. TYP.
100
140
40
450
30
MAX.
UNIT CONDITIONS.
Transition
Frequency
Switching Times
f
T
t
on
t
off
MHz
ns
ns
pF
I
C
=-100mA, V
CE
=-5V
f=100MHz
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
V
CB
=10V f=1MHz
Output
Capacitance
C
obo
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
SYMBOL
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
MAX.
175
116
70
UNIT
°C/W
°C/W
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
2.5
200
Max Power Dissipation - (Watts)
Thermal Resistance (°C/W)
D=1 (D.C.)
2.0
t
1
D=t
1
/t
P
t
P
C
1.5
as
e
te
m
pe
1.0
Am
ra
100
D=0.5
bie
tu
nt t
re
em
0.5
0
per
at u
re
D=0.2
D=0.1
Single Pulse
-40 -20
0
20 40
60 80 100 120 140 160 180 200
0
0.0001
0.001
0.01
0.1
1
10
100
T -Temperature
(°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-258