Green
DMNH6042SPS
60V 175° N-CHANNEL ENHANCEMENT MODE MOSFET
C
POWERDI
Product Summary
ADVANCE INFORMATION
ADVANCED INFORMATION
BV
DSS
60V
R
DS(ON)
Max
50m @ V
GS
= 10V
65m @ V
GS
= 4.5V
I
D
Max
T
C
= +25°
C
24A
21A
Features and Benefits
Rated to +175° – Ideal for High Ambient Temperature
C
Environments
100% Unclamped Inductive Switching – Ensures More Reliable
and Robust End Application
Low R
DS(ON)
– Minimizes Power Losses
Low Q
g
– Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMNH6042SPSQ)
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Engine Management Systems
Body Control Electronics
DC-DC Converters
Mechanical Data
Case: PowerDI5060-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI5060-8
S
D
D
D
D
Pin1
S
S
G
Top View
Bottom View
Internal Schematic
Top View
Pin Configuration
Ordering Information
(Note 4)
Part Number
DMNH6042SPS-13
Notes:
Case
PowerDI5060-8
Packaging
2500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D
D
D
D
= Manufacturer’s Marking
NH6042SS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 to 53)
NH6042SS
YY WW
S
PowerDI is a registered trademark of Diodes Incorporated.
S
S
G
DMNH6042SPS
Document number: DS38683 Rev. 1 - 2
1 of 7
www.diodes.com
July 2016
© Diodes Incorporated
DMNH6042SPS
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) V
GS
= 10V
Steady
State
T
C
= +25°
C
T
C
= +100°
C
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
I
AS
E
AS
Value
60
±20
24
17
35
24
3.5
65
Unit
V
V
A
A
A
A
mJ
ADVANCE INFORMATION
ADVANCED INFORMATION
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 7)
Avalanche Current (Note 8) L = 10mH
Avalanche Energy (Note 8) L = 10mH
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
Symbol
P
D
R
JA
P
D
R
JA
R
JC
T
J,
T
STG
Value
1.5
98
54
2.9
51
26
3.5
-55 to +175
Unit
W
°
C/W
W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°
C
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
60
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
34
45
0.8
584
83
24
3.8
4.2
8.8
1.8
1.8
3.4
1.9
10.1
4.5
12.9
5.4
Max
—
1
±100
3.0
50
65
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
nA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 5.1A
V
GS
= 4.5V, I
D
= 4.4A
V
GS
= 0V, I
S
= 2.6A
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 44V, I
D
= 5.2A
V
GS
= 10V, V
DS
= 30V,
R
G
= 6Ω, I
D
= 1A
I
F
= 2.6A, di/dt = 100A/μs
I
F
= 2.6A, di/dt = 100A/μs
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°
C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
PowerDI is a registered trademark of Diodes Incorporated.
DMNH6042SPS
Document number: DS38683 Rev. 1 - 2
2 of 7
www.diodes.com
July 2016
© Diodes Incorporated
DMNH6042SPS
30.0
V
GS
= 8.0V
25.0
V
GS
= 5.0V
25
V
GS
= 4.5V
I
D
, DRAIN CURRENT (A)
30
V
DS
= 5V
ADVANCE INFORMATION
ADVANCED INFORMATION
I
D
, DRAIN CURRENT (A)
20.0
V
GS
= 10V
20
15.0
V
GS
= 4.0V
10.0
15
10
T
J
= 175
o
C
T
J
= 150
o
C
T
J
= 125
o
C
T
J
= 85
o
C
5.0
V
GS
= 3.3V
0.0
0
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
1
5
5
T
J
= 25
o
C
T
J
= -55
o
C
6
0
1
2
3
4
5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.06
0.055
0.05
0.045
0.04
0.035
0.03
0.025
0.02
0
5
10
15
20
25
30
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
V
GS
= 10V
V
GS
= 4.5V
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
2
4
6
8
10 12 14 16 18
V
GS
, GATE-SOURCE VOLTAGE (V)
20
I
D
= 4.4A
I
D
= 5.1A
Figure 4. Typical Transfer Characteristic
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
V
GS
= 4.5V, I
D
= 4.4A
V
GS
= 10V, I
D
= 5.1A
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
V
GS
= 10V
0.07
0.06
0.05
0.04
0.03
0.02
T
J
= 175
o
C
T
J
= 150
o
C
T
J
=
125
o
C
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0.01
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
0.08
-50
-25
0
25
50
75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
PowerDI is a registered trademark of Diodes Incorporated.
DMNH6042SPS
Document number: DS38683 Rev. 1 - 2
3 of 7
www.diodes.com
July 2016
© Diodes Incorporated
DMNH6042SPS
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
-50
0
25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
1000
C
T
, JUNCTION CAPACITANCE (pF)
V
GS
= 0V
25
I
S
, SOURCE CURRENT (A)
f = 1MHz
C
iss
-25
V
GS
= 10V, I
D
= 5.1A
V
GS
= 4.5V, I
D
= 4.4A
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50
0
25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
-25
I
D
= 250µA
I
D
= 1mA
ADVANCE INFORMATION
ADVANCED INFORMATION
30
20
T
A
= 175
o
C
15
T
A
= 150
o
C
T
A
= 125
o
C
10
T
A
= 85
o
C
T
A
= 25
o
C
5
T
A
= -55
o
C
100
C
oss
C
rss
0
0
0.3
0.6
0.9
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1.2
10
0
5
10 15 20 25 30 35 40 45 50 55 60
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
100
R
DS(ON)
Limited
P
W
=10µs
10
8
I
D
, DRAIN CURRENT (A)
10
P
W
=100µs
P
W
=1ms
1
P
W
=10ms
P
W
=100ms
0.1
T
J(Max)
=175℃
T
C
=25℃
Single Pulse
DUT on infinite heatsink
V
GS
=10V
0.1
P
W
=1s
6
V
GS
(V)
4
V
DS
= 44V, I
D
= 5.2A
2
0
0
2
4
6
8
10
Q
g
(nC)
Figure 11. Gate Charge
PowerDI is a registered trademark of Diodes Incorporated.
0.01
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
DMNH6042SPS
Document number: DS38683 Rev. 1 - 2
4 of 7
www.diodes.com
July 2016
© Diodes Incorporated
DMNH6042SPS
1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
10
100
1000
R
θJC
(t) = r(t) * R
θJC
R
θJC
= 3.5℃/W
Duty Cycle, D = t1 / t2
D=0.7
D=0.9
ADVANCE INFORMATION
ADVANCED INFORMATION
PowerDI is a registered trademark of Diodes Incorporated.
DMNH6042SPS
Document number: DS38683 Rev. 1 - 2
5 of 7
www.diodes.com
July 2016
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
