DMP2008UFG
20V P-CHANNEL ENHANCEMENT MODE MOSFET
®
POWERDI
Product Summary
ADVANCE INFORMATION
ADVANCE INFORMATION
V
(BR)DSS
R
DS(ON)
max
8mΩ @ V
GS
= -4.5V
-20V
9.8mΩ @ V
GS
= -2.5V
13mΩ @ V
GS
= -1.8V
17mΩ @ V
GS
= -1.5V
I
D
max
T
A
= +25°C
-14A
-10A
-9.3A
-8.3A
Features
•
•
•
•
•
•
Low R
DS(ON)
– ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
•
•
•
•
•
•
Case: POWERDI3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Drain
Applications
•
•
Load Switch
Power Management Functions
POWERDI3333-8
S
S
Pin 1
S
G
Gate
D
D
D
D
Source
Top View
Bottom View
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMP2008UFG-7
DMP2008UFG-13
Notes:
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YYWW
S36 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)
S36
POWERDI is a registered trademark of Diodes Incorporated
DMP2008UFG
Document number: DS35694 Rev. 14 - 2
1 of 6
www.diodes.com
August 2014
© Diodes Incorporated
DMP2008UFG
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage (Note 5)
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
T
C
= +25°C
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
I
AS
E
AS
Value
-20
±8
-14
-11
-54
-80
-2.2
-15
-113
Units
V
V
A
A
A
A
mJ
ADVANCE INFORMATION
ADVANCE INFORMATION
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 8)
Avalanche Energy (Note 8)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
A
= +25°C
T
C
= +25°C
(Note 5)
(Note 6)
Symbol
P
D
R
Θ
JA
R
Θ
JC
T
J,
T
STG
Value
2.4
41
52
137
3.0
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
C
iss
C
oss
C
rss
R
G
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
V
SD
t
rr
Q
rr
Min
-20
—
—
-0.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
42
6909
635
563
2.5
72
40
8.6
14.5
22
33
291
124
-0.7
-0.7
25
15
Max
—
-1
±100
-1.0
8
9.8
13
17
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -16V, V
GS
= 0V
V
GS
=
±8V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -4.5V, I
D
= -12A
V
GS
= -2.5V, I
D
= -10A
V
GS
= -1.8V, I
D
= -9.3A
V
GS
= -1.5V, I
D
= -8.3A
V
DS
= -5V, I
D
= -12A
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DD
= -10V, I
D
= -12A
nA
V
Static Drain-Source On-Resistance
mΩ
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -2.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
BODY DIODE CHARACTERISTICS
Diode Forward Voltage
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
Notes:
S
pF
Ω
nC
ns
V
GS
= -4.5V, V
DD
= -10V,
R
G
= 6Ω, I
D
= -12A
V
V
ns
nC
V
GS
= 0V, I
S
= -12A
V
GS
= 0V, I
S
= -2A
I
F
= -12A, di/dt = 100A/µs
I
F
= -12A, di/dt = 100A/µs
5. AEC-Q101 V
GS
maximum is
±6.4V.
6. R
Θ
JA
is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R
Θ
JC
is guaranteed by design
while R
Θ
JA
is determined by the user’s board design.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
8 .UIS in production with L = 1mH, T
J
= +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated
DMP2008UFG
Document number: DS35694 Rev. 14 - 2
2 of 6
www.diodes.com
August 2014
© Diodes Incorporated
DMP2008UFG
50
V
GS
= 4.5V
30
40
-I
D
, DRAIN CURRENT (A)
25
-I
D
, DRAIN CURRENT (A)
V
DS
= -5.0V
V
GS
= 2.5V
V
GS
= 2.0V
V
GS
= 1.8V
ADVANCE INFORMATION
ADVANCE INFORMATION
20
30
V
GS
= 1.5V
15
20
10
T
A
= 150
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= -55
°
C
10
V
GS
= 1.2V
5
0
T
A
= 125
°
C
0
0
0.5
1.0
1.5
-V
DS
, DRAIN -SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
2.0
0
0.5
1.0
1.5
-V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
2.0
R
DS(ON)
,DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.05
0.030
0.04
0.025
0.020
0.03
0.015
I
D
= -12A
T
A
= 125°C
0.02
0.010
I
D
= -12A
T
A
= 25°C
0.01
0.005
0
1
0
0
10
20
30
40
-I
D
, DRAIN SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
50
5
6
7
3
4
2
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
8
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE(
Ω
)
0.020
V
GS
= -4.5V
2.2
2.0
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.016
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.012
T
A
= 125
°
C
T
A
= 150
°
C
0.008
T
A
= 85
°
C
T
A
= 25
°
C
0.004
T
A
= -55
°
C
0
0
5
10
15
20
25
-I
D
, DRAIN SOURCE CURRENT (A)
Fig. 5 Typical On-Resistance vs.
Drain Current and Temperature
30
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Fig. 6 On-Resistance Variation with Temperature
POWERDI is a registered trademark of Diodes Incorporated
DMP2008UFG
Document number: DS35694 Rev. 14 - 2
3 of 6
www.diodes.com
August 2014
© Diodes Incorporated
DMP2008UFG
R
DS(on)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.020
1.2
V
GS(TH)
, GATE THRESHOLD VOLTAGE(V)
1.0
0.015
V
GS
= -2.5V
I
D
= -10A
ADVANCE INFORMATION
ADVANCE INFORMATION
0.8
0.010
V
GS
= -4.5V
I
D
= -12A
0.6
0.4
0.005
0.2
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Fig. 7 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
100,000
f = 1MHz
0
-50
30
25
-I
S
, SOURCE CURRENT (A)
C
T
, JUNCTION CAPACITANCE (pF)
20
10,000
C
iss
15
10
1,000
C
oss
C
rss
5
0
0
0.4
0.6
0.8
1.0
0.2
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current
1.2
100
0
5
10
15
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
20
4.5
100
R
DS(on)
Limited
-V
GS
, GATE-SOURCE VOLTAGE (V)
4.0
3.0
2.5
2.0
1.5
1.0
0.5
0
0
10
20
30
40
50
60
70
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
80
-I
D
, DRAIN CURRENT (A)
3.5
10
DC
1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
P
W
= 100µs
0.1
T
J(max)
= 150°C
0.01
0.01
T
A
= 25°C
V
GS
= -8V
Single Pulse
DUT on 1 * MRP Board
0.1
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
100
POWERDI is a registered trademark of Diodes Incorporated
DMP2008UFG
Document number: DS35694 Rev. 14 - 2
4 of 6
www.diodes.com
August 2014
© Diodes Incorporated
DMP2008UFG
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
ADVANCE INFORMATION
ADVANCE INFORMATION
0.1
D = 0.1
D = 0.05
D = 0.9
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 125°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
100
1,000
0.001
0.0001
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
A3
A1
D
D2
L
(4x)
Pin 1 ID
E
E2
8
5
1
4
b2
(4x)
L1
(3x)
Z (4x)
e
b (8x)
POWERDI3333-8
Dim Min Max Typ
D
3.25 3.35 3.30
E
3.25 3.35 3.30
D2
2.22 2.32 2.27
E2
1.56 1.66 1.61
A
0.75 0.85 0.80
A1
0
0.05 0.02
A3
0.203
−
−
b
0.27 0.37 0.32
b2
0.20
−
−
L
0.35 0.45 0.40
L1
0.39
−
−
e
0.65
−
−
Z
0.515
−
−
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
G
8
Y2
G1
5
Y1
Y
1
Y3
X2
C
4
Dimensions
C
G
G1
Y
Y1
Y2
Y3
X
X2
Value (in mm)
0.650
0.230
0.420
3.700
2.250
1.850
0.700
2.370
0.420
POWERDI is a registered trademark of Diodes Incorporated
DMP2008UFG
Document number: DS35694 Rev. 14 - 2
5 of 6
www.diodes.com
August 2014
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
