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ZTX450STOA

Description
Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size81KB,2 Pages
ManufacturerDiodes Incorporated
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ZTX450STOA Overview

Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX450STOA Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
Parts packaging codeTO-92
package instructionIN-LINE, R-PSIP-W3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JESD-30 codeR-PSIP-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
GuidelineCECC
surface mountNO
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz

ZTX450STOA Preview

NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 – MARCH 1994
FEATURES
* 60 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 1 Watt
ZTX450
ZTX451
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX450
60
45
5
2
1
1
E-Line
TO92 Compatible
ZTX451
80
60
UNIT
V
V
V
A
A
W
°C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
obo
100
15
150
15
3-175
60
45
5
0.1
0.1
0.25
1.1
300
50
10
150
15
ZTX450
MIN.
80
60
5
ZTX451
MAX.
V
V
V
µ
A
µ
A
µ
A
UNIT
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=45V
V
CB
=60V
V
EB
=4V
I
C
=150mA, I
B
=15mA*
I
C
=150mA, I
B
=15mA*
I
C
=150mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
MAX. MIN.
0.1
0.1
0.35
1.1
150
V
V
MHz
pF
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
ZTX450
ZTX451
TYPICAL CHARACTERISTICS
0.4
td,tr,tf
ns
140
I
B1
=I
B2
=I
C
/10
V
CE
=-10V
ts
nS
800
700
V
CE(sat)
- (Volts)
0.3
I
C
/I
B
=10
0.2
ZTX451
Switching time
120
100
80
60
40
20
0
td
tf
tr
ts
600
500
400
300
200
100
0.1
1
0.1
ZTX450
0
0.001
0.01
0.1
1
0.01
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
Typical Switching Speeds
100
h
FE
- Normalised Gain (%)
1.0
80
60
40
0.9
I
C
/I
B
=10
V
BE(sat)
- (Volts)
0.8
0.7
0.6
0.5
0.4
0.3
20
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
10
V
BE(sat)
v I
C
Single Pulse Test at T
amb
=25°C
1.2
I
C
- Collector Current (Amps)
1.4
V
BE
- (Volts)
1
D.C.
1s
100ms
10ms
1.0ms
300µs
100µs
ZTX450
1.0
0.8
0.1
0.6
0.001
0.01
0.1
1
10
0.01
0.1
1
ZTX451
10
100
I
C
-
Collector Current (Amps)
V
CE
-
Collector Voltage (Volts)
V
BE(on)
v I
C
Safe Operating Area
3-176

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Description Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3 1000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Maker Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
package instruction IN-LINE, R-PSIP-W3 TO-92 COMPATIBLE, E-LINE PACKAGE-3 IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3
Contacts 3 3 3 3 3
Reach Compliance Code compli unknown compliant compliant compli
Parts packaging code TO-92 TO-92 TO-92 - TO-92
ECCN code EAR99 - EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A - 1 A 1 A 1 A
Collector-emitter maximum voltage 45 V - 60 V 45 V 45 V
Configuration SINGLE - SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 15 - 10 15 15
JESD-30 code R-PSIP-W3 - R-PSIP-W3 R-PSIP-W3 R-PSIP-W3
JESD-609 code e3 - e3 e3 e3
Humidity sensitivity level 1 - 1 NOT APPLICABLE 1
Number of components 1 - 1 1 1
Number of terminals 3 - 3 3 3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE - IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) 260 - 260 260 260
Polarity/channel type NPN - NPN NPN NPN
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified
Guideline CECC - CECC CECC CECC
surface mount NO - NO NO NO
Terminal surface MATTE TIN - Matte Tin (Sn) Matte Tin (Sn) MATTE TIN
Terminal form WIRE - WIRE WIRE WIRE
Terminal location SINGLE - SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 40 - 40 40 40
transistor applications SWITCHING - SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz - 150 MHz 150 MHz 150 MHz
Is it Rohs certified? - conform to conform to conform to -
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