ZTX454 datasheet, PDF - EEWORLD Datasheet

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ZTX454: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size277KB，2 Pages; ManufacturerDiodes Incorporated

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ZTX454 Overview

Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX454 Parametric

Parameter Name	Attribute value
Maker	Diodes Incorporated
Parts packaging code	TO-92
package instruction	IN-LINE, R-PSIP-W3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JESD-30 code	R-PSIP-W3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	SINGLE
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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ZTX454 Not Recommended for

New Design Please Use ZTX455

NPN SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 2 MARCH 1994

FEATURES

* 140 Volt V

CEO

* 1 Amp continuous current

* P

tot

= 1 Watt

ZTX454

ZTX455

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

ZTX454

140

120

5

2

1

E-Line

TO92 Compatible

ZTX455

160

140

UNIT

V

A

W

°C

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Sustaining Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

Static Forward

Current Transfer

Ratio

Transition

Frequency

Output Capacitance

SYMBOL

V

(BR)CBO

V

CEO(sus)

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

h

FE

f

T

C

obo

100

30

10

100

15

140

120

5

ZTX454

MIN.

160

140

5

0.1

0.7

100

10

100

15

MHz

pF

300

ZTX455

MAX.

V

µ

A

µ

A

µ

A

UNIT

CONDITIONS.

I

C

=100

µ

A

I

C

=10mA*

I

E

=100

µ

A

V

CB

=140V

V

CB

=120V

V

EB

=4V

I

C

=150mA, I

B

=15mA

I

C

=200mA, I

B

=20mA

I

C

=150mA, V

CE

=10V*

I

C

=200mA, V

CE

=1V*

I

C

=1A, V

CE

=10V*

I

C

=50mA, V

CE

=10V

f=100MHz

V

CB

=10V, f=1MHz

MAX. MIN.

0.1

0.7

1.0

300

V

* Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

Typical

3-179

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