ZVP4105ASTOB datasheet, PDF - EEWORLD Datasheet

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ZVP4105ASTOB: Description180mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size43KB，1 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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ZVP4105ASTOB Overview

180mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, E-LINE PACKAGE-3

ZVP4105ASTOB Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
package instruction	IN-LINE, R-PSIP-W3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (ID)	0.18 A
Maximum drain-source on-resistance	10 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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NOT RECOMMENDED

P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 MARCH 94

FEATURES

* 50 Volt V

* R

DS(on)

=10Ω

* Low threshold

ZVP4105A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

tot

stg

-50

E-Line

TO92 Compatible

VALUE

-175

-520

UNIT

°C

625

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

DSS

GS(th)

GSS

DSS

-50

-0.8

-2.0

-15

-60

-100

MAX. UNIT CONDITIONS.

Ω

Drain-Source Breakdown

Voltage

Gate-Source Threshold

Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

=-0.25mA, V

=0V

ID=-1mA, V

= V

20V, V

=0V

=-50V, V

=0V

=-50V, V

=0V, T=125°C

(2)

=-25V, V

=0V

=-5V,I

=-100mA

=-25V,I

=-100mA

Static Drain-Source On-State R

DS(on)

Resistance (1)

Forward Transconductance

(1)(2)

Input Capacitance (2)(4)

Common Source Output

Capacitance (2)(4)

Reverse Transfer

Capacitance (2)(4)

Rise Time (2)(3)(4)

Fall Time (2)(3)(4)

iss

oss

rss

=-25V, V

=0V, f=1MHz

Turn-On Delay Time (2)(3)(4) t

d(on)

Turn-Off Delay Time (2)(3)(4) t

d(off)

≈

-30V, I

=-270mA

(1) Measured under pulsed conditions. Width=300

s. Duty cycle

≤

(2) Sample test.

(3) Switching times measured with 50

Ω

source impedance and <5ns rise time on a pulse generator

3-435

(

)

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