A Product Line of
Diodes Incorporated
Green
ZXTN2011Z
100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
Features
•
•
•
•
•
•
•
•
•
BV
CEO
> 100V
I
C
= 4.5A high Continuous Current
I
CM
= 10A Peak Pulse Current
R
CE(sat)
= 31mΩ for a low equivalent On-Resistance
Low saturation voltage V
CE(sat)
< 60mV @ I
C
= 1A
h
FE
specified up to 10A for high current gain hold up
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
Case: SOT89
Case material: molded plastic. “Green” molding compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.05 grams (Approximate)
Applications
•
•
•
•
Motor driving
Line switching
High side switches
Subscriber line interface cards (SLIC)
SOT89
C
E
B
C
C
B
Top View
Pin Out
E
Top View
Device Symbol
Ordering Information
(Note 4)
Product
ZXTN2011ZTA
Notes:
Marking
853
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
853
853 = Product Type Marking Code
ZXTN2011Z
Da
tasheet Number: DS33663 Rev. 3 - 2
1 of 7
www.diodes.com
December 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN2011Z
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
200
100
7
4.5
10
Unit
V
V
V
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Linear derating factor
Power Dissipation (Note 6)
Linear derating factor
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Ambient (Note 7)
Operating and Storage Temperature Range
Symbol
P
D
P
D
R
θJA
R
θJA
R
θJL
T
J,
T
STG
Value
1.5
12
2.1
16.8
83
60
3.23
-55 to +150
Unit
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
≥
400
Unit
V
V
JEDEC Class
3A
C
Notes:
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; device
measured when operating in steady state condition.
6. Same as note (5), except the device is mounted on 50mm X 50mm single sided 1oz weight copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN2011Z
Da
tasheet Number: DS33663 Rev. 3 - 2
2 of 7
www.diodes.com
December 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN2011Z
Thermal Characteristics and Derating Information
I
C
Collector Current (A)
10
Limit
Max Power Dissipation (W)
V
CE(sat)
2.0
1.5
1.0
0.5
0.0
25mmX 25mm FR4 PCB
1oz Cu
50mmX 50mm FR4 PCB
1oz Cu
1
DC
1s
10ms
Single Pulse. T
amb
=25°C
25mmX 25mm FR4 PCB
1oz Cu
100ms
100m
1ms
100µs
10m
100m
V
CE
Collector-Emitter Voltage (V)
1
10
100
0
20
40
60
80
100 120 140 160
Temperature (°C)
Safe Operating Area
Derating Curve
Single Pulse. T
amb
=25°C
Thermal Resistance (°C/W)
Max Power Dissipation (W)
80
60
25mmX 25mm FR4 PCB
1oz Cu
100
25mmX 25mm FR4 PCB
1oz Cu
D=0.5
40
20
D=0.2
Single Pulse
D=0.05
D=0.1
10
0
100µ
1m
10m 100m
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Pulse Width (s)
Pulse Power Dissipation
ZXTN2011Z
Da
tasheet Number: DS33663 Rev. 3 - 2
3 of 7
www.diodes.com
December 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN2011Z
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Notes 9)
Collector-Emitter Breakdown Voltage (Notes 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Transfer Static Ratio (Notes 9)
Symbol
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
I
CER
R
≤
1kΩ
I
EBO
h
FE
Min
200
200
100
7
-
-
Typ.
235
235
115
8.1
<1
-
Max
-
-
-
-
50
500
100
500
10
-
300
-
-
30
60
115
195
1100
1000
-
-
-
Unit
V
V
V
V
nA
nA
nA
nA
nA
-
-
-
<1
-
-
100
100
30
10
-
-
-
-
<1
230
200
60
20
20
Collector-Emitter Saturation Voltage (Notes 9)
Base-Emitter Saturation Voltage (Notes 9)
Base-Emitter Turn-on Voltage (Notes 9)
Transitional Frequency
Output Capacitance
Switching Time
Notes:
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
obo
t
on
t
off
-
-
-
-
-
45
85
155
1000
900
130
26
41
1010
mV
mV
mV
MHz
pF
ns
Test Condition
I
C
= 100µA
I
C
= 1µA, R
B
≤
1kΩ
I
C
= 1mA
I
E
= 100µA
V
CB
= 150V
V
CB
= 150V, T
A
= +100°C
V
CB
= 150V
V
CB
= 150V, T
A
= +100°C
V
EB
= 6V
I
C
= 10mA, V
CE
= 2V
I
C
= 2A, V
CE
= 2V
I
C
= 5A, V
CE
= 2V
I
C
= 10A, V
CE
= 2V
I
C
= 100mA, I
B
= 5mA
I
C
= 1A, I
B
= 100mA
I
C
= 2A, I
B
= 100mA
I
C
= 5A, I
B
= 500mA
I
C
= 5A, I
B
= 500mA
I
C
= 5A, V
CE
= 2V
I
C
= 100mA, V
CE
= 10V,
f = 50MHz
V
CB
= 10V, f = 1MHz,
V
CC
= 10V, I
C
= 1A,
I
B1
= I
B2
= 100mA
8. Measured under pulsed conditions. Pulse width
≤
300μs. Duty cycle
≤
2%.
ZXTN2011Z
Da
tasheet Number: DS33663 Rev. 3 - 2
4 of 7
www.diodes.com
December 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN2011Z
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
1
Tamb=25°C
0.6
0.5
I
C
/I
B
=10
V
CE(SAT)
(V)
V
CE(SAT)
(V)
I
C
/I
B
=50
I
C
/I
B
=20
0.4
100°C
100m
0.3
0.2
0.1
-55°C
25°C
I
C
/I
B
=10
10m
1m
10m
I
C
Collector Current (A)
100m
1
10
0.0
1m
10m
V
CE(SAT)
v I
C
I
C
Collector Current (A)
100m
1
10
V
CE(SAT)
v I
C
250
1.2
V
CE
=2V
1.4
I
C
/I
B
=10
1.0
0.8
0.6
0.4
0.2
0.0
1m
10m
100m
1
-55°C
25°C
Typical Gain (h
FE
)
100°C
200
150
100
50
0
10
Normalised Gain
1.2
V
BE(SAT)
(V)
1.0
0.8
-55°C
0.6
0.4
1m
10m
25°C
100°C
I
C
Collector Current (A)
h
FE
v I
C
I
C
Collector Current (A)
100m
1
10
V
BE(SAT)
v I
C
1.4
1.2
V
CE
=2V
V
BE(ON)
(V)
1.0
0.8
0.6
0.4
-55°C
25°C
100°C
1m
10m
I
C
Collector Current (A)
100m
1
10
V
BE(ON)
v I
C
ZXTN2011Z
Da
tasheet Number: DS33663 Rev. 3 - 2
5 of 7
www.diodes.com
December 2012
© Diodes Incorporated
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