BD137 datasheet, PDF - EEWORLD Datasheet

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BD137: DescriptionPower Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size339KB，2 Pages; ManufacturerMicro Commercial Components (MCC)

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BD137 Overview

Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

BD137 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Micro Commercial Components (MCC)
Parts packaging code	SIP
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	1.5 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1.25 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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MCC

)HDWXUHV

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

BD135

BD137

BD139

•

DC Current Gain - h

FE

= 40 (Min) @I

C

= 150mAdc

Complementary with BD136, BD138, BD140

0D[LPXP5DWLQJV

Rating

Collector-Emitter Voltage

BD135

BD137

BD139

Collector-Base Voltage

BD135

BD137

BD139

Emitter-Base Voltage

Collector Current

Base Current

Total Device Dissipation @T

A

=25

Derate above 25

Total Device Dissipation @T

C

=25

Derate above 25

Operating & Storage Temperature Range

Maximum Thermal Resistance Junction to

Case

Maximum Thermal Resistance Junction to

Ambient Air

V

CBO

V

EBO

I

C

I

B

P

D

P

D

T

J

, T

STG

R

-&

R

-$

45

60

100

5.0

1.5

0.5

1.25

10

12.5

100

-55 to +150

10

100

Vdc

D

Power Transistors

NPN Silicon

45,60,80 Volts

Unit

Vdc

A

K

Symbol

V

CEO

Value

45

60

80

TO-126

:

Vdc

Adc

Watt

mW/

Watt

mW/

R

E

B

:

/W

:

/W

:

F

G

L

H

C

M

N

P

(OHFWULFDO &KDUDFWHULVWLFV #

°

& 8QOHVV 2WKHUZLVH 6SHFLILHG

Symbol

Parameter

Collector-Emitter Sustaining Voltage*

(I

C

=30mA,I

B

=0) BD135

BD137

BD139

Collector Cutoff Current

(V

CB

=30Vdc, I

E

=0)

(V

CB

=30Vdc, I

E

=0, T

C

=125 )

Emitter Cutoff Current

(V

BE

=5.0Vdc, I

C

=0)

DC Current Gain*

(I

C

=5mAdc, V

CE

=2Vdc)

(I

C

=0.5Adc, V

CE

=2Vdc)

(I

C

=150mAdc, V

CE

=2Vdc)

Collector-Emitter Saturation Voltage

(I

C

=500mAdc, I

B

=50mAdc)

Base-Emitter ON Voltage

(V

CE

=2V, I

C=

0.5A)

Min

Max

Units

Vdc

45

60

80

0.1

10

µAdc

!

2)) &+$5$&7(5,67,&6

BV

CEO

J

Q

I

CBO

I

EBO

h

FE

:

25

40

250

0.5

1

Vdc

V

CE(sat)

V

BE(on)

*Pulse test: Pulse width 300

µsec,

Duty cycle 2%

www.mccsemi.com

Revision: 2

2003/04/30

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