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TIP30

Description
Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3
CategoryDiscrete semiconductor    The transistor   
File Size80KB,5 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
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TIP30 Overview

Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3

TIP30 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerBourns
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)30 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
TIP30, TIP30A,TIP30B, TIP30C
PNP SILICON POWER TRANSISTORS
Designed for Complementary Use with the
TIP29 Series
30 W at 25°C Case Temperature
1 A Continuous Collector Current
3 A Peak Collector Current
Customer-Specified Selections Available
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
TIP30
Collector-base voltage (I
E
= 0)
TIP30A
TIP30B
TIP30C
TIP30
Collector-emitter voltage (I
B
= 0)
TIP30A
TIP30B
TIP30C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
½LI
C
2
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
-80
-100
-120
-140
-40
-60
-80
-100
-5
-1
-3
-0.4
30
2
32
-65 to +150
-65 to +150
250
V
A
A
A
W
W
mJ
°C
°C
°C
V
V
UNIT
This value applies for t
p
0.3 ms, duty cycle
10%.
Derate linearly to 150°C case temperature at the rate of 0.24 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -0.4 A, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= -20 V.
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1

TIP30 Related Products

TIP30 TIP30B
Description Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3 Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Maker Bourns Bourns
Parts packaging code TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 1 A 1 A
Collector-emitter maximum voltage 40 V 80 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 15 15
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 30 W 30 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

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