SEMICONDUCTOR
RoHS
40PT Series
RoHS
Stansard SCRs, 40A
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
40
600 to 1600
4
to
35
Unit
A
V
mA
1
2
1
3
2
3
2
TO-220AB
(non-Insulated)
(40PTxxA)
A2
TO-220AB
(lnsulated)
(40PTxxAI)
DESCRIPTION
The 40PT series of silicon controlled rectifiers are
high performance glass passivated technology,
and are suitable for general purpose applications,
where in-rush current conditions are critical such
as overvoltage crowbar protection circuits in power
supplies, in-rush current limiting circuits, solid
state relay in back to back configuration, welding
equipment and high power motor control.
Base on a clip assembly technology, they offer a
superior performance in surge current capabilities.
A1 A2
G
A1 A2 G
TO-3P
(non-Insulated)
(40PTxxB)
TO-3P
(Insulated)
(40PTxxBI)
A2
A1 A2
G
1
2
3
2
(A2)
TO-263
(D
2
PAK)
(40PTxxH)
TO-247AB
(non-Insulated)
(40PTxxC)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
SYMBOL
TEST CONDITIONS
TO-3P/TO-247AB
I
T(RMS)
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current
(full
cycle, T
j
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
TO-3P/TO-247AB
I
T(AV)
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
I
TSM
I
2
t
dI/dt
I
GM
P
GM
P
G(AV)
V
DRM
V
RRM
T
stg
T
j
V
RGM
T
j
=125ºC
600
to 1600
- 40
to
+ 150
ºC
Operating junction temperature range
Maximum peak reverse gate voltage
- 40
to
+ 125
5
V
V
F =50 Hz
F =60 Hz
t
p
= 10 ms
F = 60 Hz
T
p
= 20 µs
T
p
=20µs
T
j
=125ºC
T
j
= 125ºC
T
j
= 125ºC
T
j
= 125ºC
T
c
=95°C
T
c
=90°C
T
c
=80°C
T
c
=95°C
T
c
=90°C
T
c
=80°C
t = 20 ms
t = 16.7 ms
460
480
1058
50
4
10
1
A
A
2
s
A/µs
A
W
W
25
A
40
A
VALUE
UNIT
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
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Page 1 of 5
SEMICONDUCTOR
RoHS
40PT Series
RoHS
(T
J
= 25 ºC unless otherwise specified)
TEST CONDITIONS
Min.
40PTxxxx
4
mA
35
1.3
0.2
75
150
1000
1.6
10
4
0.85
10
V
V
mA
mA
V/µs
V
µA
mA
V
mΩ
Unit
ELECTRICAL SPECIFICATIONS
SYMBOL
I
GT
V
D
= 12V, R
L
= 33Ω
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
I
DRM
I
RRM
V
to
R
d
Max.
Max.
V
D
= V
DRM
, R
L
= 3.3K
Ω,
R
GK
= 220
Ω
I
T
= 500mA, Gate open
I
G
= 1.2
×
I
GT
V
D
= 67% V
DRM
, Gate open
I
T
= 80A, t
P
= 380µs
V
D
=V
DRM
, V
R
=V
RRM
R
GK
= 220Ω
Threshold Voltage
Dynamic Resistance
T
j
= 125°C
Min.
Max.
Max.
T
j
= 125°C
T
j
= 25°C
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 125°C
Min.
Max.
Max.
Max.
Max.
Max.
THERMAL RESISTANCE
SYMBOL
R
th(j-c)
Junction to case
(DC)
S = 1 cm
2
R
th(j-a)
Junction to ambient
Parameter
D
2
PAK/TO-220AB/TO-3P/TO-247AB
TO-220AB insulated/TO-3P insulated
TO-263( D
2
PAK)
TO-220AB/TO-220AB insulated
TO-3P/TO-247AB/TO-3P insulated
S=Copper surface under tab
VALUE
0.8
°C/W
0.9
45
60
50
°C/W
UNIT
PRODUCT SELECTOR
VOLTAGE
(x
x)
PART NUMBER
600
V
40PTxxA/40PTxxAl
40PTxxH
40PTxxB/40PTxxBI
40PTxxC
V
V
V
V
800
V
V
V
V
V
1000
V
V
V
V
V
1200
V
V
V
V
V
1600
V
V
V
V
V
35
mA
35
mA
35
mA
35
mA
TO-220AB
D
2
PAK
TO-3P
TO-247AB
SENSITIVITY
PACKAGE
ORDERING INFORMATION
ORDERING TYPE
40PTxxA
40PTxxAI
40PTxxH
40PTxxB
40PTxxBI
40PTxxC
Note:
xx
=
voltage
MARKING
40PTxxA
40PTxxAI
40PTxxH
40PTxxB
40PTxxBI
40PTxxC
PACKAGE
TO-220AB
TO-220AB (insulated)
TO-263(D
2
PAK)
TO-3P
TO-3P insulated
TO-247AB
WEIGHT
2.0g
2.3g
2.0g
4.3g
4.8g
5g
BASE Q,TY
50
50
50
30
30
30
DELIVERY MODE
Tube
Tube
Tube
Tube
Tube
Tube
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Page 2 of 5
SEMICONDUCTOR
RoHS
40PT Series
RoHS
ORDERING INFORMATION SCHEME
40 PT 06
Current
40 = 40A,
I
T(RMS)
SCR series
Voltage Code
06 = 600V
08 = 800V
10 = 1000V
12 = 1200V
16 = 1600V
Package type
A
=
TO-220AB (non-insulated)
AI
=
TO-220AB ( insulated)
B
=
TO-3P (non-insulated)
BI
=
TO-3P ( insulated)
C = TO-247AB
H = TO-263 (D
2
PAK)
Fig.1 Maximum average power dissipation
versus average on-state current.
P(W)
40
35
30
25
20
15
10
5
0
0
5
10
36 0°
Fig.2 RMS on-state current versus case
temperature.
I
T(RMS)
50
TO-3P
TO-247AB
α=180°
D.C.
40
30
20
10
TO-220AB
TO-263
TO-220AB insulated
TO-3P insulated
I
T( AV)
(A)
15
20
α
T
case
(°C)
30
0
0
25
50
75
100
125
25
Fig.3 Relative variation of thermal impedance
versus pulse duration.
Fig.4 Relative variation of gate trigger current,
holding current and latching current versus
junction temperature.
l
GT
,
l
H
,
l
L
[T
j
] / l
GT
,l
H
,l
L
[T
j
=25°C]
2.5
2.0
1.5
K=[Z
th
/R
th
]
1.00
Z
th(j-c)
0.10
Z
th(j-a)
l
GT
1.0
0.5
l
H
&l
L
0.01
1E-3
1E-2
1E-1
t
P
(s)
1E+0
1E+1
1E+2
5E+3
0.0
-40
-20
0
20
T
j
(°C)
40
60
80
100
120
140
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Page 3 of 5
SEMICONDUCTOR
RoHS
40PT Series
RoHS
Fig.5 Surge peak on-state current versus
number of cycles.
Fig.6 Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms, and corresponding
values of l
2
t .
5000
500
450
400
350
300
250
200
150
100
50
0
I
TSM
(A)
I
TSM
(A),
l
2
t
(A
2
s)
T
j
initial = 25°C
t p = 10ms
l
TSM
One cycle
Non repetitive
T
j
initial = 25°C
1000
l
2
t
Repetitive
T
c
= 95°C
dl/dt limitation
Number of cycles
1
10
100
1000
100
0.01
T
p
(ms)
0.10
1.00
10.00
Fig.7 On-state characteristics
(maximum values)
I
TM
(A)
T
j
= max.:
V
to
=0.85V
R
d
= 10mΩ
500
100
T
j
= max
10
T
j
= 25°C
V
TM
(V)
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Case Style
TO-220AB
10.54 (0.415)
MAX.
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
16.13 (0.635)
15.87 (0.625)
3
15.32 (0.603)
14.55 (0.573)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
14.22 (0.560)
13.46 (0.530)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
0.56 (0.022)
0.36 (0.014)
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
1
4.06 (0.160)
3.56 (0.140)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
PIN
2
2
(A2)
(G)3
1(A1)
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Page 4 of 5
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