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43CTQ080SPBF

Description
20 A, 80 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size169KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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43CTQ080SPBF Overview

20 A, 80 V, SILICON, RECTIFIER DIODE

43CTQ080SPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeTO-263
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.67 V
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak forward current850 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current20 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
VS-43CTQ...SPbF, VS-43CTQ...-1PbF Series
Vishay High Power Products
Schottky Rectifier, 2 x 20 A
VS-43CTQ...SPbF
VS-43CTQ...-1PbF
FEATURES
175 °C T
J
operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long
term reliability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Halogen-free according to IEC 61249-2-21 definition
Compliant to RoHS directive 2002/95/EC
AEC-Q101 qualified
Base
common
cathode
2
Base
common
cathode
2
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
D
2
PAK
TO-262
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, freewheeling diodes, and reverse battery
protection.
PRODUCT SUMMARY
I
F(AV)
V
R
2 x 20 A
80 V/100 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
20 Apk, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
40
80/100
850
0.67
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-43CTQ080SPbF
VS-43CTQ080-1PbF
80
VS-43CTQ100SPbF
VS-43CTQ100-1PbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
per device
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
50 % duty cycle at T
C
= 135 °C, rectangular waveform
40
A
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
850
275
7.50
0.50
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
20
UNITS
T
J
= 25 °C, I
AS
= 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Document Number: 94224
Revision: 15-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1

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