SHIELDED SMT POWER INDUCTORS
SMTDRRI 0402/0804/1206 TYPE
Shape and Size : (Dimensions are in mm)
Features :
．With
magnetic shield against radiation.
．DRRI0402
can help achieve significantly longer
battery life in handheld communication devices.
．DRRI0804/1206
designed for the higher current
requirements of portable computers.
．DRRI0402
used ceramic base with gold-plating.
．DRRI0804/1206
used LCP plastic base.
Ordering Information :
SMT
(1)
DRRI0804 - 101 M
(2)
(3) (4)
(1)Type :
Surface Mountable Type.
(2)Style :
DR
Core with
RI
Shield.
(3)Inductance :
101
for
100
uH.
(4)Inductance tolerance :
M
:
±20%
;
N
:
±30%.
Inductance and rated current ranges :
．SMTDRRI0402
．SMTDRRI0804
．SMTDRRI1206
1.0~10000uH
1.0 ~ 47 uH
10 ~1000 uH
3.0~0.02A
5.0~0.8 A
3.9~0.53A
Characteristics :
．Saturation
Rated Current (Isat):
The current when the inductance
becomes 10% lower than its initial value. (Ta=20℃)
．Temperature
Rise Current (Irms):
The current when temperature
of coil increases up to Max.
△T=40℃.
(Ta=20℃)
．Operating
temperature: -40 to 105
℃.
．Test
equipments :
L : Agilent 4284A LCR meter @100 kHz 0.1V.
Q : Agilent 4284A LCR meter @200 or 100kHz 0.1V.
DC Resistance : Milli-ohm meter or equivalent.
SRF: Agilent 4291B RF Impedance Analyzer .
．Electrical
specifications at 25℃.
Applications :
．Portable
telephones .
．Personable
computers.
．DC/DC
converters, etc.
．Other
various electronic appliances.
16.1
SHIELDED SMT POWER INDUCTORS
SMTDRRI 0402/0804/1206 TYPE
L
(
μH
)
Part
No.
Q Min.
DCR Max.
( OHM )
SRF Ref.
( MHz )
I rms
(A)
SMTDRRI0402 -1R0N
1.0
30
SMTDRRI0402 -1R5N
1.5
30
SMTDRRI0402 -2R2N
2.2
40
SMTDRRI0402 -3R3N
3.3
40
SMTDRRI0402 -4R7N
4.7
40
SMTDRRI0402 -6R8N
6.8
40
SMTDRRI0402 -100M
10
40
SMTDRRI0402 -150M
15
40
SMTDRRI0402 -220M
22
40
SMTDRRI0402 -330M
33
40
SMTDRRI0402 -470M
47
40
SMTDRRI0402 -680M
68
40
SMTDRRI0402 -101M
100
40
SMTDRRI0402 -151M
150
40
SMTDRRI0402 -221M
220
40
SMTDRRI0402 -331M
330
40
SMTDRRI0402 -471M
470
40
SMTDRRI0402 -681M
680
40
SMTDRRI0402 -102M
1000
40
SMTDRRI0402 -152M
1500
50
SMTDRRI0402 -222M
2200
50
SMTDRRI0402 -332M
3300
50
SMTDRRI0402 -472M
4700
50
SMTDRRI0402 -682M
6800
50
SMTDRRI0402 -103M
10000
50
*
Q tested Frequency : 1R0~100 200kHz 0.1V ; 150~103 100 kHz 0.1V
Part
No.
L
(
μH
)
1.0
1.5
2.2
3.3
4.7
6.8
10
15
22
33
47
10
15
22
33
47
68
100
150
220
330
470
680
1000
DCR Max.
( OHM )
0.021
0.022
0.032
0.039
0.054
0.075
0.101
0.150
0.207
0.334
0.472
0.040
0.048
0.059
0.075
0.097
0.138
0.207
0.293
0.470
0.780
1.08
1.40
2.01
0.040
0.045
0.050
0.055
0.060
0.065
0.075
0.090
0.11
0.19
0.23
0.29
0.48
0.59
0.90
1.40
1.80
2.20
3.40
4.20
8.50
11.0
13.9
25.0
32.8
SRF Ref.
( MHz )
140
120
80
70
40
38
35
25
19
15
13
30
20
18
14
10
9.0
7.0
6.0
5.0
4.0
3.0
2.5
2.0
250
125
120
120
105
50
38
33
25
20
20
15
10
9.0
6.0
5.0
4.0
3.0
2.0
2.0
2.0
1.0
1.0
1.0
0.8
I sat
(A)
5.6
5.2
5.0
3.9
3.2
2.8
2.4
2.0
1.6
1.4
1.0
8.0
7.0
6.0
5.0
4.0
3.0
2.4
2.1
1.9
1.1
1.1
0.96
0.80
3.0
2.3
1.8
1.6
1.4
1.2
1.0
0.80
0.70
0.60
0.50
0.40
0.30
0.26
0.22
0.20
0.19
0.18
0.15
0.12
0.10
0.08
0.06
0.04
0.02
I rms
(A)
5.0
4.5
3.8
3.3
2.7
2.2
2.0
1.5
1.3
1.1
0.80
3.9
3.4
3.1
2.8
2.4
2.0
1.7
1.3
1.1
0.86
0.73
0.64
0.53
SMTDRRI0804 -1R0N
SMTDRRI0804 -1R5N
SMTDRRI0804 -2R2N
SMTDRRI0804 -3R3N
SMTDRRI0804 -4R7N
SMTDRRI0804 -6R8N
SMTDRRI0804 -100M
SMTDRRI0804 -150M
SMTDRRI0804 -220M
SMTDRRI0804 -330M
SMTDRRI0804 -470M
SMTDRRI1206 -100M
SMTDRRI1206 -150M
SMTDRRI1206 -220M
SMTDRRI1206 -330M
SMTDRRI1206 -470M
SMTDRRI1206 -680M
SMTDRRI1206 -101M
SMTDRRI1206 -151M
SMTDRRI1206 -221M
SMTDRRI1206 -331M
SMTDRRI1206 -471M
SMTDRRI1206 -681M
SMTDRRI1206 -102M
16.2
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
