Preliminary Data Sheet
TDA21201
Integrated Switch
(MOSFET Driver and MOSFETs)
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
Replaces with one part only the semiconductors of a DC/DC
power stage for a 12 V
à
1 ... 3.3 V conversion:
FET driver + High side FET + Low side FET
Raises the efficiency by reducing static and dynamic losses
beyond 85 % due to optimized MOSFETs and Driver
Reduces overall part count and board space consumption
Simplifies and shortens the circuit design and the layout
Eliminates the need for external bootstrap components
Provides simplest overall output current scalability
Protects the Driver and the MOSFETs against over-
temperature and shoot-through problems Vcc
à
Gnd
Achieves the lowest thermal resistance Rthjc and Rthja
Uses the well-known, easy-to-assemble and robust
standard TO-220 and TO-263 (D²Pak) package
Requires no separate supply voltage to operate except 12 V
Three state input to enable a shut down mode to turn off
both MOSFETs
Compatible with standard 2-, 3-, 4-, 6-phase PWM controller
ICs
Ideal for compact, highly-efficient, multi-phase voltage
regulators on motherboards and VRMs
Package
TO-220-7-3
TO-220-7-230
TO-263-7-2
Marking
21201P7
21201S7
21201B7
Ordering Code
Q67042-S4100
Q67042-S4101
Q67042-S4099
P-TO220-7-3
P-TO220-7-230
1
P-TO263-7-2
7
Type
TDA21201-P7
TDA21201-S7
TDA21201-B7
Pin Configuration and Function
Pin number
1,2,3
4/tab
5
6,7
Pin name
GND
V
OUT
IN
V
CC
Pin description
Ground
Output voltage from common node of the MOSFETs
Input signal from PWM controller
Supply voltage to MOSFETs and Driver IC
General Description
The Integrated Switch TDA21201 incorporates an intelligent MOSFET driver and two
Power MOSFETs in a single package to form a fully integrated and optimized power
stage of a DC/DC synchronous buck converter including the bootstrap components
for the high-side MOSFET.
The Power MOSFETs are optimized for lowest static and dynamic losses for a 12 V
to sub-3.5 V conversion and can handle up to 30 A output current. The TDA21201 is
manufactured in Infineon´s state-of-the-art multi-chip assembly using a low-Rth 7-Pin
Page 1
Apr-29, 2002
Preliminary Data Sheet
TDA21201
TO-220 package or its associated SMD counterpart TO-263 and Infineon´s latest
chip technologies.
Block Diagram
V
CC
= 12 V (Pin 6-7)
High side FET
V
IN
to PWM IC
(Pin 5)
FET Drive
Circuitry
V
OUT
to output inductor
(Pin 4/tab)
Low side FET
GND
(Pin 1-3)
Absolute Maximum Ratings
At Tj = 25 °C, unless otherwise specified
Parameter
Peak voltage supplied to ‘VCC’ pins
Peak voltage supplied to ‘IN’ pin, D
IN_Peak
< 10 %
Peak voltage at ‘Vout’ pin to GND
Maximum DC output current, V
CC
= 12 V, V
OUT
≤
3.3 V
Junction temperature
Storage temperature
Lead temperature TO-263;
MSL1, IPC/JEDEC J-STD-020A
Lead temperature TO-220 (soldering, 10 seconds)
ESD rating (Human body model)
IEC climatic category; DIN EN 60068-1
Symbol
V
CC_PEAK
V
IN
V
OUT_PK
I
OUT_MAX
T
J
T
S
T
L
T
L
ESD
Unit
Value
Min. Max.
-5
-5
-10
-55
20*
10
20*
30
150
150
225
260
2k
55/150/56
V
-
V
A
°C
* The positive peak voltage (= the voltage overshoot during switching transients) at the VCC pins and
the OUT pin/tab is limited by the Integrated Switch itself (pls., see the “Over-voltage protection of
VCC” paragraph
Thermal Characteristic
Parameter
Thermal resistance, junctions-case
Thermal resistance, junctions-ambient, leaded
Page 2
Symbol
Values
Unit
Min. Typ. Max.
1.9 K/W
62.5
Apr-29, 2002
Preliminary Data Sheet
TDA21201
SMD version, device on PCB:
@ min. footprint
@ 6 cm² cooling area
Electrical Characteristics
At Tj = 25 °C, unless otherwise specified
62
40
Parameter
Symbol
Conditions
Unit
Values
Min. Typ. Max.
1.2
0.8
10
-10
-2
20
-10
35
1.6
2.5
22
10
-50
80
µA
V
µs
mA
Input Characteristic (= MOSFET Driver)
Shut down window
V
IN_SHUT
t_
SHUT
> 1.5 µs
Shut down hold-off
t_
SHUT
1.2 V
≤
V
IN
≤
1.6 V
time
Supply current during I
CC_SHUT
1.2 V
≤
V
IN
≤
1.6 V
shut down
V
CC
= 12 V
Current into ‘IN’ pin,
I
IN_SHUT
V
IN
= 1.4 V
during shut down
Current into ‘IN’ pin,
I
IN_LOW
V
IN
= 0.4 V
Low
Current into ‘IN’ pin,
I
IN_HIGH
V
IN
= 4.5 V
High
Static Characteristic (= High Side and Low Side MOSFET)
V
DS_HS
D-S Breakdown
Voltage High Side
1.2 V
≤
V
IN
≤
1.6 V
V
DS_LS
D-S Breakdown
I
D
= 0.25 A
Voltage Low Side
D-S Leakage Current I
DSS_HS
High Side
1.2 V
≤
V
IN
≤
1.6 V
D-S Leakage Current
I
DSS_LS
V
CC
= 12 V
High Side
Drain-Source on
R
DSon_HS
Resistance High Side
I
OUT
= 15 A
Tj = 25 °C
Drain-Source on
R
DSon_LS
Resistance Low Side
Drain-Source on
R
DSon_HS
Resistance High Side
I
OUT
= 15 A
Tj = 125 °C
Drain-Source on
R
DSon_LS
Resistance Low Side
Dynamic Characteristic (= Integrated Switch)
IN to OUT delay time
t
d(ON)
L
à
H; 50 % to 50 %
I
OUT
= 15 A
IN to OUT delay time
t
d(OFF)
H
à
L; 50 % to 50 %
(s. Timing Diagram)
OUT rise time; 20 %
t
r
to 80 %
OUT fall time; 80 to
t
f
20 %
1.5
16
30
V
0.1
1
µA
13.3
4.8
mΩ
17.7
6.4
110
70
10
10
150
100
ns
25
30
Page 3
Apr-29, 2002
Preliminary Data Sheet
TDA21201
Operating Conditions
At Tj = 25 °C, unless otherwise specified
Parameter
Voltage supplied to
‘VCC’ pins
Voltage ‘IN’ Low
Voltage ‘IN’ High
Input signal transition
frequency
Pulse width Input
Power dissipation
Junction temperature
Symbol
V
CC
V
IN_L
V
IN_H
f
t
P_IN
P
TOT
T
J
Conditions
Unit
Values
Min. Typ. Max.
9
-0.5
2.1
100
90
-25
10
125
15
V
0.8
5.5
500
KHz
ns
W
°C
Timing Diagram
50%
V
IN
50%
V
OUT
t
d(on)
t
d(off)
Typical application
A circuit designer will value the Integrated Switch TDA21201 as cost-optimized
power stage solution in high-density DC/DC conversion applications using a Vcc = 12
V input where efficiency and board space is an issue, e.g. in multi-phase
microprocessor supplies on motherboards, in VRMs and servers.
The TDA21201 can also be used to power Logic circuits, Memory banks etc. that
require higher voltages, e.g. 2.5 or 3.3 V. The efficiency of the Integrated Switch and
the overall efficiency of the converter will even go up at these elevated output
voltages compared to the 1.6 V efficiency given later on in this data sheet.
Page 4
Apr-29, 2002
Preliminary Data Sheet
TDA21201
Designing a 12 V to sub-3.3 V converter using the TDA21201
General info
To design a multi-phase converter with a 12 V input simply use in each phase
just one TDA21201 instead of using a MOSFET driver, a high side MOSFET,
bootstrap components, and one or more low side MOSFETs. The entire
converter is completed by the input filter, the output filter and a multi-phase
PWM IC.
Input compatibility to standard PWM controllers / shut-down mode
The Integrated Switch TDA21201 has a high impedance input pin ‘IN’ to be
connected to PWM controller outputs ‘PWM1’, ‘PWM2’ etc. It sinks or sources
only a fraction of a mA from the controller’s output. The TDA21201 is
compatible to standard controller and driver signals in terms of the signal level
(5 V TTL) and in terms of the ‘Low’/’High’ relationship (’Low’ turns the low side
MOSFET on, ‘High` turns the High side MOSFET on).
The TDA21201 can be shut down (the high side MOSFET and the low side
MOSFET is turned off) by applying an input signal V
IN
= 1.2 ... 1.6 V for more
than 1.5 µs typical. This way the TDA21201 reduces the power dissipation by
saving the gate charges of both the high side and the low side MOSFET
during no load conditions. The shutdown state is terminated when V
IN
moves
into the ‘Low’ or ‘High’ threshold.
Typical Application: 12 V
à
1.x V N-Phase Converter using the TDA21201
12 V
FET
Driver
1
PWM 1
L
1
1...2 V
C
PWM
IC
PWM 2
PWM N
L
N
FET
Driver
N
Page 5
Apr-29, 2002
京公网安备 11010802033920号
EEWORLD
