SB3030 datasheet, PDF - EEWORLD Datasheet

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SB3030: Description30 A, 30 V, SILICON, RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size41KB，3 Pages; ManufacturerWon-Top Electronics Co., Ltd.; Websitehttps://www.wontop.com/

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SB3030 Overview

30 A, 30 V, SILICON, RECTIFIER DIODE

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W TE

PO WE R SEM IC O ND UC TO R S

SB3030PT – SB3060PT

30A SCHOTTKY BARRIER RECTIFIER

Features

!

Schottky Barrier Chip

Guard Ring for Transient Protection

High Current Capability, Low Forward

Low Reverse Leakage Current

High Surge Current Capability

Plastic Material has UL Flammability

Classification 94V-O

H

TO-3P

Dim

A

B

C

D

E

G

H

J

K

L

M

N

P

R

S

Min

Max

3.20

3.50

4.59

5.16

20.80

21.30

19.70

20.20

2.10

2.40

0.51

0.76

15.90

16.40

1.70

2.70

3.10 Ø

3.30 Ø

3.50

4.51

5.20

5.70

1.12

1.22

2.90

3.30

11.70

12.80

4.30 Typical

All Dimensions in mm

S

R

PIN1

2

3

J

K

P

N

M

A

B

L

Mechanical Data

!

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-750, Method 2026

Polarity: As Marked on Body

Weight: 5.6 grams (approx.)

Mounting Position: Any

Marking: Type Number

C

PIN 1 -

PIN 3 -

+

Case PIN 2

G

D

E

Maximum Ratings and Electrical Characteristics

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

@T

A

=25°C unless otherwise specified

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current

@T

C

= 95°C

Symbol

V

RRM

V

RWM

V

R

V

R(RMS)

I

O

I

FSM

V

FM

I

RM

C

j

R

JC

T

j

, T

STG

SB

3030PT 3035PT 3040PT 3045PT 3050PT 3060PT

30

21

35

24.5

40

28

30

275

0.55

1.0

75

1100

2.0

-65 to +150

0.70

45

31.5

50

35

60

42

Unit

V

A

V

mA

pF

K/W

°C

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

Forward Voltage

Peak Reverse Current

At Rated DC Blocking Voltage

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance Junction to Case (Note 2)

Operating and Storage Temperature Range

@I

F

= 15A

@T

A

= 25°C

@T

A

= 100°C

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal resistance junction to case mounted on heatsink.

SB3030PT – SB3060PT

1 of 3

SB3030 Related Products

	SB3030	SB3060PT	SB3050PT	SB3045PT	SB3040PT	SB3035PT	SB3030PT
Description	30 A, 30 V, SILICON, RECTIFIER DIODE	30 A, 60 V, SILICON, RECTIFIER DIODE, TO-247AD	30 A, 50 V, SILICON, RECTIFIER DIODE	30 A, 45 V, SILICON, RECTIFIER DIODE	30 A, 40 V, SILICON, RECTIFIER DIODE, TO-247AD	30 A, 35 V, SILICON, RECTIFIER DIODE	30 A, 30 V, SILICON, RECTIFIER DIODE, TO-247AD
Is it Rohs certified?	-	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	-	Won-Top Electronics Co., Ltd.	Won-Top Electronics Co., Ltd.	Won-Top Electronics Co., Ltd.	-	Won-Top Electronics Co., Ltd.	Won-Top Electronics Co., Ltd.
package instruction	-	TO-3P, 3 PIN	TO-3P, 3 PIN	TO-3P, 3 PIN	R-PSFM-T3	TO-3P, 3 PIN	TO-3P, 3 PIN
Reach Compliance Code	-	unknow	unknow	compli	compli	unknow	unknow
ECCN code	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
application	-	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	-	CATHODE	CATHODE	CATHODE	CATHODE	CATHODE	CATHODE
Configuration	-	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS
Diode component materials	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	-	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	-	0.7 V	0.7 V	0.55 V	0.55 V	0.55 V	0.55 V
JESD-30 code	-	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	-	e0	e0	e0	e0	e0	e0
Maximum non-repetitive peak forward current	-	275 A	275 A	275 A	275 A	275 A	275 A
Number of components	-	2	2	2	2	2	2
Phase	-	1	1	1	1	1	1
Number of terminals	-	3	3	3	3	3	3
Maximum operating temperature	-	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	-	15 A	15 A	15 A	15 A	15 A	15 A
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Maximum repetitive peak reverse voltage	-	60 V	50 V	45 V	40 V	35 V	30 V
Maximum reverse current	-	1000 µA	1000 µA	1000 µA	1000 µA	1000 µA	1000 µA
surface mount	-	NO	NO	NO	NO	NO	NO
technology	-	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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