Si3861DV
August 2001
Si3861DV
Integrated Load Switch
General Description
This device is particularly suited for compact power
management in portable electronic equipment where
2.5V to 8V input and 2.8A output current capability are
needed. This load switch integrates a small N-Channel
power MOSFET (Q1) that drives a large P-Channel
power MOSFET (Q2) in one tiny SuperSOT
TM
-6
package.
Applications
•
Load switch
•
Power management
Features
•
–2.8 A, –8 V. R
DS(ON)
= 55 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 70 mΩ @ V
GS
= –2.5 V
R
DS(ON)
= 100 mΩ @ V
GS
= –1.8 V
•
Control MOSFET (Q1) includes Zener protection for
ESD ruggedness (>6KV Human body model)
•
High performance trench technology for extremely
low R
DS(ON)
S1
D1
D2
Vin,R1
ON/OFF
Q2
Equivalent Circuit
3
2
Q1
4
5
6
Vout,C1
IN
Vout,C1
R2
+
V
DROP –
OUT
G2
SuperSOT
TM
-6
Pin 1
G1
S2
R1,C1
1
See Application Circuit
ON/OFF
SuperSOT™-6
Absolute Maximum Ratings
Symbol
V
IN
V
ON/OFF
I
Load
P
D
T
J
, T
STG
Parameter
Maximum Input Voltage
T
A
=25
o
C unless otherwise noted
Ratings
±
8
–0.5 to 8
(Note 1)
Units
V
V
A
W
°C
High level ON/OFF voltage range
Load Current
– Continuous
– Pulsed
Maximum Power Dissipation
(Note 1)
–2.8
–9
0.7
–55 to +150
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1)
180
60
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
.861
Device
Si3861DV
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
2001
Fairchild Semiconductor Corporation
Si3861DV Rev B(W)
Si3861DV
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
IN
I
Load
I
FL
I
RL
V
ON/OFF (th)
R
DS(on)
Vin Breakdown Voltage
Zero Gate Voltage Drain Current
Leakage Current, Forward
Leakage Current, Reverse
(Note 2)
V
ON/OFF
= 0 V, I
D
= –250
µA
V
IN
= 6.4 V,
V
ON/OFF
= 0 V,
V
ON/OFF
= 0 V
V
IN
= 8 V
8
–1
–100
100
0.4
0.9
34
45
64
3.1
3.8
1.5
55
70
100
4
5
V
µA
nA
nA
V
mΩ
V
ON/OFF
= 0 V, V
IN
= –8 V
V
IN
= V
ON/OFF
, I
D
= –250
µA
V
IN
= 4.5 V,
V
IN
= 2.5 V,
V
IN
= 1.8 V,
V
IN
= 4.5 V,
V
IN
= 2.7 V,
I
D
= –2.8A
I
D
= –2.5 A
I
D
= –2.0 A
I
D
= 0.4A
I
D
= 0.2 A
On Characteristics
Gate Threshold Voltage
Static Drain–Source
On–Resistance (Q2)
Static Drain–Source
On–Resistance (Q1)
R
DS(on)
Ω
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
V
ON/OFF
= 0 V, I
S
= –0.6 A
(Note 2)
–0.6
–1.2
A
V
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R
θJC
is guaranteed by design while R
θJA
is determined by the user’s board design.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Si3861DV Load Switch Application Circuit
IN
R1
Q2
C1
OUT
Q1
ON/OFF
LOAD
R2
External Component Recommendation:
For additional in-rush current control, R2 and C1 can be added. For more information, see application note AN1030.
Si3861DV Rev B(W)
Si3861DV
0.4
0.35
0.3
-V
DROP
, (V)
0.25
0.2
0.15
0.1
0.05
0
0
1
2
3
-I
L
, (A)
4
5
6
T
J
= 25
O
C
V
IN
= -1.8V
V
ON/OFF
= -1.5V -8V
PW = 300us, D < 2%
0.4
0.35
T
J
= 125
O
C
-V
DROP
, (V)
0.3
0.25
0.2
0.15
0.1
0.05
0
0
V
IN
= -2.5V
V
ON/OFF
= -1.5V -8V
PW = 300us, D < 2%
T
J
= 125
O
C
T
J
= 25
O
C
1
2
3
-I
L
, (A)
4
5
6
Figure 1. Conduction Voltage Drop
Variation with Load Current.
0.4
0.35
0.3
-V
DROP
, (V)
0.25
0.2
0.15
0.1
0.05
0
0
1
2
3
-I
L
, (A)
4
5
6
V
IN
= -4.5V
V
ON/OFF
= -1.5V -8V
PW = 300us, D < 2%
Figure 2. Conduction Voltage Drop
Variation with Load Current.
0.15
0.125
0.1
0.075
T
J
= 125 C
0.05
0.025
0
1
2
3
4
-V
IN
, INPUT VOLTAGE (V)
5
T
J
= 25 C
O
O
T
J
= 125
O
C
T
J
= 25 C
O
Figure 3. Conduction Voltage Drop
Variation with Load Current.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
R
DS(ON)
, ON-RESISTANCE ( )
I
L
= -1A
V
ON/OFF
= -1.5V -8V
PW = 300us, D < 2%
Figure 4. On-Resistance Variation
With Input Voltage
R
θJA
(t) = r(t) + R
θJA
R
θJA
= 156 °C/W
P(pk)
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Si3861DV Rev B(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
FAST
®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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